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蒸发氧化法制备高透过率ZnO薄膜

发表时间:2009-08-15  浏览量:1579  下载量:704
全部作者: 李雪,程轶,迟景阳,梁红伟,赵涧泽,孙景昌,胡礼中,杜国同
作者单位: 大连理工大学物理与光电工程学院;大连海事大学物理系;集成光电子学国家重点联合实验室(吉林大学实验区),吉林大学电子科学与工程学院
摘 要: 利用真空蒸发氧化方法制备ZnO透明导电薄膜。首先蒸发沉积一层Zn膜,然后将Zn膜热氧化,制备ZnO透明导电薄膜。结果显示:利用这种方法制备的ZnO透明导电薄膜具有c轴择优生长取向。讨论了薄膜的择优定向生长过程、特点及影响因素。原创性地开发了分步氧化法对Zn薄膜进行氧化,制备ZnO透明导电薄膜,并研究不同的氧化方法对ZnO薄膜的影响。采用X射线衍射(X�ray diffraction,XRD)及透射光谱研究了不同氧化过程对ZnO薄膜结构、光学性能的影响。结果表明:采用分步氧化法得到的样品质量明显好于直接氧化的样品,获得样品的最高可见光透过率大于90%.
关 键 词: 电子物理学;ZnO薄膜;蒸发氧化法;分步氧化;X射线衍射;低温氧化
Title: ZnO thin films of high transmission prepared by evaporation�oxidation method
Author: LI Xue, CHENG Yi, CHI Jingyang, LIANG Hongwei, ZHAO Jianze, SUN Jingchang, HU Lizhong, DU Guotong
Organization: School of Physics and Optoelectronic Technology, Dalian University of Technology;Physics Department, Dalian Maritime University;State Key Laboratory on Integrated Optoelectronics Jilin University Regin, College of Electronic Scinece and Engineering, Jilin University
Abstract: In this research, vacuum thermal evaporation is used to prepare transparent ZnO conductive film. In the first step, Zn films were deposited by thermal evaporation technique and then ZnO transparent and conductive films with highly preferred c�axis orientation were prepared through thermal oxidation operation. The process, characteristics and influence factors for the growth of the films with preferred growth orientation were discussed. Most importantly, a new method was creatively discovered in oxidizing Zn thin films, that is step�by�step oxidation method. And the influences of different oxidation methods on ZnO transparent and conductive thin films were investigated. The structure and optical property were tested by X�ray diffraction (XRD) and transmitted spectrum. The results show that the quality of ZnO transparent and conductive thin films made by step�by�step oxidation method is much better than direct oxidation method, and the highest light transmittance of thin films is over 90%.
Key words: electron physics; ZnO thin films; evaporation�oxidation method; step by step oxidation method; X ray diffraction; low temperature oxidation
发表期数: 2009年8月第15期
引用格式: 李雪,程轶,迟景阳,等. 蒸发氧化法制备高透过率ZnO薄膜[J]. 中国科技论文在线精品论文,2009,2(15):1562-1565.
 
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