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用于SNOM的GaAs微探尖选择剥离和转移

发表时间:2010-02-15  浏览量:1400  下载量:434
全部作者: 梁秀萍,许育波,朱锦霞,胡礼中
作者单位: 大连理工大学物理与光电工程学院
摘 要: 介绍了一种用于扫描近场光学显微镜(scanning near field optical microscopy, SNOM)传感头的GaAs微探尖的选择剥离和转移技术。利用浓盐酸对生长在具有SiO2掩膜窗口的GaAs衬底上的GaAs 微探尖/AlGaAs牺牲层双层结构中的AlGaAs层选择刻蚀,剥离下独立的GaAs微探尖;借助显微镜将探尖转移到垂直腔面发射激光器(vertical-cavity surface-emitting laser, VCSEL)出光窗口上。扫描 电镜(scanning electron microscope, SRM)结果表明:经浓盐酸选择刻蚀剥离和转移的GaAs微探尖结构完整、表面光滑无损,解决了用于SNOM传感头的微探尖无损剥离、转移难以对准VCSEL出光窗口的 难题。此方法操作简单,易实现大批量探尖的剥离,剥离下的微探尖不仅可用于SNOM传感头,还能用于扫描探针显微镜(scanning probe microscope, SPM)系列中其他显微镜上。
关 键 词: 半导体技术;湿法刻蚀;微探尖剥离;转移;扫描近场光学显微镜
Title: Selectively peeling and transforming of GaAs microtips for the application in SNOM
Author: LIANG Xiuping, XU Yubo, ZHU Jinxia, HU Lizhong
Organization: School of Physics and Optoelectronic Engineering, Dalian University of Technology
Abstract: A selective peeling and transforming technique of GaAs microtips was introduced in this paper, which could be used for scanning near field optical microscopy (SNOM). By selectively etching the AlGaAs layer of GaAs microtip/AlGaAs sacrificial layer structure grown on GaAs substrate with SiO2 mask windows, independent GaAs microtips were successfully peeled from GaAs substrate and transformed to the emission windows of vertical-cavity surface-emitting laser (VCSEL). Scanning electron microscopy (SEM) images show that the peeled GaAs microtips have smooth surface and are not damaged during the peeling process. This easy process could be employed as peeling of microtips on large scale and the peeled GaAs microtips can not only be used as SNOM prober but also in scanning probe microscopy system.
Key words: semiconductor technology; wet etching; microtip peeling; transforming; scanning near field optical microscopy
发表期数: 2010年2月第3期
引用格式: 梁秀萍,许育波,朱锦霞,等. 用于SNOM的GaAs微探尖选择剥离和转移[J]. 中国科技论文在线精品论文,2010,3(3):239-242.
 
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