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反应室气压对Mg掺杂GaN的影响

发表时间:2014-02-15  浏览量:1757  下载量:672
全部作者: 朱铭,梁红伟,申人升,张克雄,夏晓川,宋世巍,柳阳,杜国同
作者单位: 大连理工大学物理与光电工程学院;吉林大学电子科学与工程学院,集成光电子学国家重点实验室
摘 要: 利用Aixtron CCS金属有机化学气相沉积(metal-organic chemical vapor deposition, MOCVD)设备生长了Mg掺杂的GaN,通过对反应室内气压的调节,在150,250,400,600 mbar气压下,制备了4个Mg掺杂GaN样品。利用X射线衍射(X-ray diffraction, XRD)对样品表面形貌及界面质量进行表征。研究表明:随着反应室气压的增加,样品的生长速率逐渐下降,位错密度逐渐增加,Mg的并入量减少。
关 键 词: 微电子学与固体电子学;p型GaN;气压调节;Mg掺杂GaN
Title: Effects of pressure on the Mg doped GaN layers
Author: ZHU Ming, LIANG Hongwei, SHEN Rensheng, ZHANG Kexiong, XIA Xiaochuan, SONG Shiwei, LIU Yang, DU Guotong
Organization: School of Physics and Optoelectronic Engineering, Dalian University of Technology; State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University
Abstract: A series of Mg doped GaN were grown with four different pressures using metal-organic chemical vapor deposition (MOCVD) in an Aixtron CCS close-coupled showerhead reactor. The four pressures for samples were 150, 250, 400, 600 mbar respectively. The quality of samples was characterized by X-ray diffraction(XRD). The results showed that, with the increasing pressure, the growth rate of Mg doped GaN decreased but the dislocation density was deteriorated simultaneously. These results indicate that higher growth pressure leads to a lower Mg incorporation in the p-GaN layer
Key words: microelectronics and solid state electronics; p-GaN; pressure adjusting; Mg doped GaN
发表期数: 2014年2月第3期
引用格式: 朱铭,梁红伟,申人升,等. 反应室气压对Mg掺杂GaN的影响[J]. 中国科技论文在线精品论文,2014,7(3):219-223.
 
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