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基于NSGA-II算法的刻蚀机腔室关键结构工艺参数多目标优化

发表时间:2017-11-30  浏览量:1073  下载量:109
全部作者: 崔广英,杨为,张翔
作者单位: 重庆大学机械传动国家重点实验室;重庆大学机械工程学院;重庆大学汽车工程学院
摘 要: 以某18英寸晶元湿法刻蚀机腔室为研究对象,建立以入口流量、入口半径、阻尼板渗透系数、喷淋板渗透系数和刻蚀腔间距为参数的中心复合设计(central composite design,CCD)。采用最小二乘法拟合得到平均刻蚀速率和刻蚀不均匀性的响应面模型,以二者为优化目标,使用非支配排序遗传算法(non-dominated sorting genetic algorithm,NSGA-II)得到了最优刻蚀工艺下结构工艺参数的Pareto非劣解集,并研究最优刻蚀工艺下的结构工艺参数分布规律。优化结果表明,该方法可以有效获得最优刻蚀结构工艺参数,提高刻蚀工艺性能。
关 键 词: 半导体加工技术;平均刻蚀速率;刻蚀不均匀性;NSGA-II;多目标优化
Title: Multi-objective optimization of the key structures and process parameters of etching machine chamber based on NSGA-II
Author: CUI Guangying, YANG Wei, ZHANG Xiang
Organization: State Key Laboratory of Mechanical Transmissions, Chongqing University; College of Mechanical Engineering, Chongqing University; School of Automotive Engineering, Chongqing University
Abstract: Taking the new 18-inch wet etching chamber as the research object, the center composite design (CCD) with inlet flow rate, inlet radius, damping plate permeability coefficient, spray plate permeability coefficient and etching chamber spacing was established. The response surface model of average etching rate and etching nonuniformity were obtained by least squares fitting. Using the non-dominated sorting genetic algorithm (NSGA-II), the Pareto non-inferior solutions set of the structure and process parameters for the optimal etching process were obtained, and the distribution of structures and process parameters was studied. The optimization results show that the method can effectively obtain the optimal etching process parameters and improve the performance of the etching process.
Key words: semiconductor processing technology; average etching rate; etching nonuniformity; NSGA-II; multi-objective optimization
发表期数: 2017年11月第22期
引用格式: 崔广英,杨为,张翔. 基于NSGA-II算法的刻蚀机腔室关键结构工艺参数多目标优化[J]. 中国科技论文在线精品论文,2017,10(22):2525-2531.
 
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