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AlGaN/GaN HEMT器件的高温小信号模型分析

发表时间:2021-06-19  浏览量:211  下载量:29
全部作者: 韩永坤,张贺秋,陈帅昊,薛东阳,刘力涛,徐瑞良,梁永凤,梁红伟,夏晓川,梁晓华
作者单位: 大连理工大学微电子学院;中国科学院高能物理研究所粒子天体物理研究中心
摘 要: 基于GaN材料的耐高温、抗辐照等优越特性,使其与Si材料相比,更适用于航空航天以及太空探测领域。本文采用AlGaN/GaN高电子迁移率晶体管(high electron mobility transistor,HEMT)作为探测器的前置放大电路,并测试了HEMT器件在不同工作温度时的S参数,对器件的小信号模型参数进行提取,得出AlGaN/GaN HEMT器件小信号等效高温电路模型的参数变化。结果表明,温度升高对器件小信号模型的本征参数会有很大的影响,因此高温情况下的小信号建模仍然必不可少。
关 键 词: 半导体技术;高电子迁移率晶体管;高温;小信号模型;参数提取
Title: High-temperature small-signal model analysis of AlGaN/GaN HEMT device
Author: HAN Yongkun, ZHANG Heqiu, CHEN Shuaihao, XUE Dongyang, LIU Litao, XU Ruiliang, LIANG Yongfeng, LIANG Hongwei, XIA Xiaochuan, LIANG Xiaohua
Organization: School of Microelectronics, Dalian University of Technology; Research Center for Particle Astrophysics, Institute of High Energy Physics, Chinese Academy of Sciences
Abstract: In view of the superior characteristics of GaN materials, such as high temperature resistance and radiation resistance, compared with Si materials, GaN is more suitable for applications in the fields of aerospace and space exploration. In this paper, AlGaN/GaN high electron mobility transistor (HEMT) was used as the preamplifier circuit of the detector, the S parameters of HEMT device under different operating temperatures were tested, the small-signal model parameters of the device were extracted, and then the parameter changes of the small-signal equivalent high-temperature circuit model of AlGaN/GaN HEMT device were obtained. The results show that the temperature rise will have a great impact on the intrinsic parameters of the small-signal model of the device, so small-signal modeling at high temperature is still essential.
Key words: semiconductor technology; high electron mobility transistor; high temperature; small-signal model; parameter extraction
发表期数: 2021年6月第2期
引用格式: 韩永坤,张贺秋,陈帅昊,等. AlGaN/GaN HEMT器件的高温小信号模型分析[J]. 中国科技论文在线精品论文,2021,14(2):253-260.
 
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