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超薄InGaAs应变层上多层InAs/InGaAs量子点的结构和光学性质研究

发表时间:2011-05-15  浏览量:1659  下载量:738
全部作者: 张春玲,姚江宏,徐波
作者单位: 南开大学物理科学学院;中国科学院半导体研究所
摘 要: 研究在GaAs基50 nm InGaAs应变层上生长了6层InAs 量子点(QDs)层,通过分析各层之间的应力状况,配合生长过程中的反射式高能电子衍射仪(reflection high-energy electron diffraction,RHEED)实时监测及生长后得到的表面形貌、测得的77 K光致发光(photoluminescence, PL)谱,发现应变层和衬底之间形成的位错对量子点的分布有导向作用,但是位错的存在严重影响了材料的光学性能。
关 键 词: 材料物理与化学;量子点;分子束外延;应力;光致发光谱
Title: Structural and optical properties of multilayer InAs/InGaAs quantum dots on ultra-thin InGaAs strained layer
Author: ZHANG Chunling, YAO Jianghong, XU Bo
Organization: Institute of Physics, Nankai University; Institute of Semiconductors, Chinese Academy of Sciences
Abstract: Six layer InAs quantum dots (QDs) were grown on 50 nm InGaAs strained layer. By analyzing the strain between different layers, combining real time inspection by reflection high-energy electron diffraction (RHEED), the surface morphology measurement after growth, and the 77 K photoluminescence (PL) spectrum, it was found that the dislocations formed between strained layer and substrate can affect the distribution of QDs, but the optical characteristic is damaged by the dislocations at the same time.
Key words: materials physics and chemistry; quantum dots; molecular beam epitaxy; stress; photoluminescence spectrum
发表期数: 2011年5月第9期
引用格式: 张春玲,姚江宏,徐波. 超薄InGaAs应变层上多层InAs/InGaAs量子点的结构和光学性质研究[J]. 中国科技论文在线精品论文,2011,4(9):798-801.
 
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