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Si纳米线室温脆韧转变机理的研究
发表时间：2011-08-15 浏览量：2115 下载量：867
| 全部作者： | 郑坤，韩晓东，张跃飞，张泽 |
| 作者单位： | 北京工业大学固体微结构与性能研究所；浙江大学工学部 |
| 摘 要： | 在透射电子显微镜(transmission electron microscope, TEM)中，利用新发展的纳米材料变形方法，在室温环境中实现了单轴拉伸以及弯曲下Si纳米线的塑性变形。通过原子尺度的高分辨照片揭示了位错形核是脆韧转变的关键因素，并且位错易于在表面形核，表面附近的位错密度高达1017/m2，高于内部的位错密度1016/m2；由于两套{111}面在变形过程中是等价的，均可产生位错，一旦滑移相遇，容易钉扎，形成Lomer锁；不断钉扎的位错，增殖了位错密度。 |
| 关 键 词： | 凝聚态物理；室温脆韧转变；透射电子显微镜；Si纳米线 |
| Title： | Investigation on mechanism of brittle�ductile transition of Si nanowires at room temperature |
| Author： | ZHENG Kun, HAN Xiaodong, ZHANG Yuefei, ZHANG Ze |
| Organization： | Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology; Faculty of Engineering, Zhejiang University |
| Abstract： | Using new developed method for deformation of nanomaterials, Si nanowires were performed plastic deformation under axial tension and bent in transmission electron microscope (TEM). Dislocation nucleation was the dominated factor to achieve brittle�ductile transition which was disclosed by high resolution TEM images. The density of dislocations of the surface was about 1017/m2, while that of interior was 1016/m2. Dislocations nucleation can be taken place on two equivalent {111} planes. They were easily pinned to form Lomer lock once they met, which induced the increase of dislocation density. |
| Key words： | condensed matter physics; room temperature brittle�ductile transition; transmission electron microscope; Si nanowire |
| 发表期数： | 2011年8月第15期 |
| 引用格式： | 郑坤，韩晓东，张跃飞，等. Si纳米线室温脆韧转变机理的研究[J]. 中国科技论文在线精品论文，2011，4（15）：1340-1345. |
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