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磁控溅射掺铝氧化锌薄膜的Ar气工艺条件研究
发表时间：2012-03-31 浏览量：1746 下载量：800
| 全部作者： | 宋瑞良，刘玮，孙云 |
| 作者单位： | 南开大学光电子薄膜器件与技术研究所；中国电子科技集团公司第54研究所 |
| 摘 要： | 磁控溅射掺铝氧化锌（Al-doped zinc oxide, AZO）透明导电膜是大面积太阳能薄膜电池工业化生产的重要工艺手段。实验发现：在溅射过程中改变不同的Ar气进气方式，AZO薄膜都呈现了中间厚度高于两侧厚度的不均匀现象，而且Ar气进气管的遮挡情况对厚度的峰值位置分布也有一定影响，这是由Ar气气流在靶表面的压强分布不均导致。研究通过实验和模拟的手段分析这种现象产生的机理，对提高溅射镀膜的均匀性起到理论指导作用。 |
| 关 键 词： | 太阳能；微电子；磁控溅射；流体模拟；氧化锌 |
| Title： | Research on Ar gas technology condition of AZO thin film by magnetron sputtering |
| Author： | SONG Ruiliang, LIU Wei, SUN Yun |
| Organization： | Institute of Photo-electronic Thin Film Device and Technology, Nankai University; The 54th Research Institute of China Electronics Technology Corporation |
| Abstract： | Magnetron sputtering Al-doped zinc oxide (AZO) thin film is the main method for industrial fabrication of large area thin film solar cell. With different inlet modes of Ar gas in sputtering process, the AZO thin films showed the nonuniform phenomenon obviously that the thickness of thin film was larger in the middle than the side, the occlusion of Ar gas inlet could make some influences on the peak position of thickness. The reason was that the pressure distribution on the top of target is nonuniform. This paper analyzed this phenomenon by the means of experiment and simulation, which would establish the theoretical foundation for the large area uniform thin films fabrication by sputtering. |
| Key words： | solar energy; icroelectronic; magnetron sputtering; fluid simulation; zinc oxide |
| 发表期数： | 2012年3月第6期 |
| 引用格式： | 宋瑞良，刘玮，孙云. 磁控溅射掺铝氧化锌薄膜的Ar气工艺条件研究[J]. 中国科技论文在线精品论文，2012，5（6）：530-534. |
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