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阳极氧化SiO2退火工艺对硅光生少子复合的影响
发表时间：2014-02-15 浏览量：2087 下载量：812
| 全部作者： | 文都子，刘维峰，骆英琳，乔建坤 |
| 作者单位： | 大连理工大学物理与光电工程学院 |
| 摘 要： | 采用电化学方法在绒面硅表面生长一层SiO2钝化层，在不同退火温度和时间下研究硅的光生少数载流子复合过程。使用高频电容电压（capacitance-voltage, C-V）及瞬态表面光伏（surface photovoltage, SPV）衰减技术研究分析不同退火条件下SiO2/Si界面特性的变化及光生少数载流子的复合过程。通过实验发现较低温度下退火后固定正电荷减少，界面缺陷态没有变化，从而加快了光生少数载流子的复合。500℃下退火则界面缺陷态以及固定正电荷同时减少，界面缺陷态减少产生的影响更显著，起到了减慢光生少数载流子复合的作用。 |
| 关 键 词： | 微电子学与固体电子学；SiO2；阳极氧化；退火 |
| Title： | Effect of anodic SiO2 oxide’s annealing treatment on the minority carrier recombination in silicon |
| Author： | WEN Duzi, LIU Weifeng, LUO Yinglin, QIAO Jiankun |
| Organization： | School of Physics and Optoelectronic Engineering, Dalian University of Technology |
| Abstract： | SiO2 films were fabricated on textured Si wafers by anodic oxidation, and the Si wafers were annealed at different temperatures and time. The products were characterized by capacitance-voltage (C-V) and surface photovoltage (SPV) measurement. It was found that surface states and positive fixed charges changed with annealing temperatures. When the annealing temperature was low, just positive fixed charges were decreased, so minority carriers' recombination velocity was increased. Both surface states and positive fixed charges decreased when the annealing temperature arrived at 500℃, but the surface states were decreased significantly. Then minority carriers’recombination velocity was decreased. |
| Key words： | microelectronics and solid state electronics; SiO2; anodic oxidation; annealing |
| 发表期数： | 2014年2月第3期 |
| 引用格式： | 文都子，刘维峰，骆英琳，等. 阳极氧化SiO2退火工艺对硅光生少子复合的影响[J]. 中国科技论文在线精品论文，2014，7（3）：224-228. |
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