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n型ZnO纳米棒/p型金刚石异质结微分负阻特性研究
发表时间：2014-02-15 浏览量：1894 下载量：476
| 全部作者： | 桑丹丹，成绍恒，王启亮，裴晓强，刘钧松，李红东 |
| 作者单位： | 吉林大学超硬材料国家重点实验室；徐州工程学院数学与物理科学学院；兰州物理研究所 |
| 摘 要： | 利用热蒸发法，在硼掺杂化学气相沉积（chemical vapor deposition, CVD）多晶金刚石膜上生长ZnO纳米棒（nanorods，NRs），制备出n型ZnO NRs/p型金刚石异质结结构。当金刚石为轻掺杂时，n型ZnO NRs/p型金刚石异质结具有整流特性；而当金刚石重掺杂到简并态时，n型ZnO NRs/p型金刚石异质结出现微分负阻现象。研究表明微分负阻现象是由异质结的隧穿电流引起。 |
| 关 键 词： | 凝聚态物理；ZnO纳米棒；硼掺杂化学气相沉积金刚石；n型ZnO纳米棒/p型金刚石异质结；微分负阻 |
| Title： | Negative differential resistance of n-ZnO nanorods/p-diamond heterojunction |
| Author： | SANG Dandan, CHENG Shaoheng, WANG Qiliang, PEI Xiaoqiang, LIU Junsong, LI Hongdon |
| Organization： | State Key Laboratory of Superhard Materials, Jilin University; School of Mathematics and Physical Sciences, Xuzhou Institute of Technology; Lanzhou Institute of Physics |
| Abstract： | By thermal vapor transport method, ZnO nanorods (NRs) were grown on boron-doped chemical vapor deposited (CVD) polycrystalline diamond films. The n-ZnO NRs/p-diamond heterojunctions were constructed and show typical rectifying current-voltage behavior for lightly boron-doped diamond. When the p-type diamond is degenerated with heavily boron doping, a negative differential resistance phenomenon is presented for the heterojunctions. The origin of the NDR is attributed to the tunneling current occurred in the hybrid structure. |
| Key words： | condensed matter physics; ZnO nanorods; B-doped chemical vapor deposited diamond; n-ZnO nanorods/p-diamond heterojunction; negative differential resistance |
| 发表期数： | 2014年2月第3期 |
| 引用格式： | 桑丹丹，成绍恒，王启亮，等. n型ZnO纳米棒/p型金刚石异质结微分负阻特性研究[J]. 中国科技论文在线精品论文，2014，7（3）：236-241. |
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