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B掺杂金刚石膜上ZnO：Eu NRs的生长及性质研究
发表时间：2014-08-15 浏览量：1904 下载量：555
| 全部作者： | 于琦，马一博，裴晓强，刘钧松，桑丹丹，杨怡舟，成绍恒，王启亮，李红东 |
| 作者单位： | 吉林大学超硬材料国家重点实验室；陕西理工学院材料科学与工程学院 |
| 摘 要： | 利用水热合成法，在B掺杂p型金刚石膜上生长Eu掺杂ZnO纳米棒(Eu doped zinc oxide nanorods, ZnO:Eu NRs)，并研究其形貌变化、发光及半导体异质结电学特性等与Eu掺杂浓度的关系。结果表明：随Eu掺杂浓度的增加，ZnO:Eu NRs出现尖端聚集现象。Eu掺杂提高了ZnO纳米棒紫外发光强度。制作ZnO:Eu NRs/p型金刚石异质结，其表现出良好的整流特性，并可能出现微分负阻现象。 |
| 关 键 词： | 半导体物理学；ZnO；Eu掺杂；ZnO:Eu/p型金刚石异质结；整流特性 |
| Title： | Growth and properties of ZnO: Eu NRs on B-doped diamond film |
| Author： | YU Qi, MA Yibo, PEI Xiaoqiang, LIU Junsong, SANG Dandan, YANG Yizhou, CHENG Shaoheng, WANG Qiliang, LI Hongdong |
| Organization： | State Key Laboratory of Superhard Materials, Jilin University; School of Materials Science and Engineering, Shaanxi University of Technology |
| Abstract： | In this paper, by hydrothermal method, the Eu doped zinc oxide nanorods (ZnO: Eu NRs) have been fabricated on p-type B-doped diamond films. The morphology, ultraviolet photoluminescence (UV-PL) and heterojunction electrical characteristic of the ZnO: Eu NRs are investigated. With increasing the doping level of Eu, a phenomenon of top aggregation emerges for the ZnO: Eu NRs, and the intensity of the UV-PL emission is enhanced. For the current-voltage measurements of the constructed ZnO: Eu NRs/p-diamond heterojunctions, a rectifying behavior is presented, and a possible negative differential resistance characteristic in the forward voltage is observed. |
| Key words： | semiconductor physics; ZnO; Eu doped; ZnO: Eu/p-diamond heterojunction; rectifying characteristic |
| 发表期数： | 2014年8月第15期 |
| 引用格式： | 于琦，马一博，裴晓强，等. B掺杂金刚石膜上ZnO：Eu NRs的生长及性质研究[J]. 中国科技论文在线精品论文，2014，7（15）：1562-1566. |
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