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栅氧预清洗对栅氧可靠性的影响及机理研究
发表时间：2019-10-31 浏览量：1399 下载量：243
| 全部作者： | 刘强，钱俊 |
| 作者单位： | 上海华力微电子有限公司 |
| 摘 要： | 随着科技的不断进步，器件的尺寸越来越小，栅氧完整性（gate oxide integrity，GOI）问题越来越凸显。本文研究由于栅氧预清洗工艺导致的栅氧化层工艺失效问题。在标准清洗工艺RCA中，SC1溶液的温度对栅氧有源区（active area，AA）拐角形貌影响较大。采用热SC1清洗溶液会在有源区拐角产生尖角异常，其主要是由于热SC1对硅衬底产生较大的刻蚀量所导致。由于有源区拐角处与溶液接触面积较少，热SC1对有源区拐角处硅刻蚀量少。最终有源区拐角栅氧化层厚度偏薄，导致栅氧可靠性失效。采用冷SC1溶液代替热SC1的清洗方式可以消除有源区拐角的尖角异常，栅氧可靠性失效点可以完全消除。 |
| 关 键 词： | 工业工程学；栅氧完整性；标准清洗工艺；失效；可靠性；栅氧击穿 |
| Title： | Investigation on effect of gate oxide reliability and its mechanism for gate oxide pre-clean process |
| Author： | LIU Qiang, QIAN Jun |
| Organization： | Shanghai Huali Microelectronics Corporation |
| Abstract： | With the development of science and technology, the size of devices becomes smaller and smaller, and the gate oxide integrity (GOI) problem becomes more and more critical. In this paper, the failure of gate oxide process due to gate oxide pre-clean process was studied. In standard clean technology RCA, the temperature of SC1 solution had a great influence on the morphology of the active area (AA) corner. The use of hot SC1 clean solution would cause sharp corner anomaly at AA corner, which was mainly caused by the high etching amount of hot SC1 on the silicon substrate. However, due to the small contact area between AA corner and clean solution, hot SC1 would cause less silicon etching amount on AA corner. Finally, the thickness of AA corner gate oxide layer was relatively thin, which eventually leaded to the reliability failure of gate oxide. The use of cold SC1 solution instead of hot SC1 clean method could eliminate the sharp corner anomaly of AA corner, and the reliability failure point of gate oxide could be completely eliminated. |
| Key words： | industrial engineering; gate oxide integrity; standard clean technology; failure; reliability; gate oxide breakdown |
| 发表期数： | 2019年10月第5期 |
| 引用格式： | 刘强，钱俊. 栅氧预清洗对栅氧可靠性的影响及机理研究[J]. 中国科技论文在线精品论文，2019，12（5）：857-864. |
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