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与硅基激光器单片集成的多层氮化硅端面耦合器的设计方法
发表时间：2023-06-30 浏览量：398 下载量：66
| 全部作者： | 张惠媛，高楷翔，卢新园，刘怀兵，杨一粟 |
| 作者单位： | 北京邮电大学电子工程学院；北京邮电大学信息光子学与光通信全国重点实验室 |
| 摘 要： | 针对边发射III-V族激光器与硅波导之间光耦合存在的问题，提出了一种可以在多层硅上氮化硅（SiN-on-Si）波导平台制备的双层五尖端端面耦合器。该耦合器用于1 550 nm激光器和SiN单模波导之间的单片集成。仿真得到结构的总耦合效率为74%，1 dB效率恶化对应的垂直对准容差高达0.41 μm，1 dB光学工作带宽>800 nm，器件耦合长度为26 μm。设计了一个宽带宽SiN-Si层间绝热耦合器以连接到端面耦合器，激光功率耦合到单模Si波导中的总耦合效率达70.7%。此方法为单片集成激光器在硅基光子学平台上的应用提供了可能性。 |
| 关 键 词： | 光电子学与激光技术；微纳光子学；硅基光子学；理论和设计；波导 |
| Title： | Design of multilayer silicon nitride edge coupler monolithically integrated with laser on silicon |
| Author： | ZHANG Huiyuan, GAO Kaixiang, LU Xinyuan, LIU Huaibing, YANG Yisu |
| Organization： | School of Electronic Engineering, Beijing University of Posts and Telecommunications; State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications |
| Abstract： | This paper proposed a bi-layer 5-tip edge coupler produced in a multilayer silicon nitride-on-silicon (SiN-on-Si) waveguide platform to solve the problems of the optical coupling between an edge emitting III-V laser and a silicon waveguide. The coupler was used for the monolithic integration between a 1550 nm laser and a single-mode SiN waveguide. The simulated total coupling efficiency is 74%. When the efficiency deterioration is 1 dB, the corresponding vertical alignment tolerance is as large as 0.41 μm. The 1 dB optical working bandwidth is greater than 800 nm and device coupling length is 26 μm. A broadband SiN-Si interlayer adiabatic coupler cascaded to the edge coupler is designed. The total coupling efficiency of laser power into a single-mode Si waveguide could be up to 70.7%. This method provides the possibility for the application of monolithic laser on silicon-based photonics platform. |
| Key words： | optoelectronics and laser technology; micro/nanophotonics; silicon photonics; theory and design; waveguide |
| 发表期数： | 2023年6月第2期 |
| 引用格式： | 张惠媛，高楷翔，卢新园，等. 与硅基激光器单片集成的多层氮化硅端面耦合器的设计方法[J]. 中国科技论文在线精品论文，2023，16（2）：271-278. |
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