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三维CRAM存储元结构设计及热场分析

发表时间:2009-02-15  浏览量:1621  下载量:772
全部作者: 李娟,王嘉赋
作者单位: 武汉理工大学理学院物理科学与技术系;材料复合新技术国家重点实验室
摘 要: 基于特征尺寸为0.15 μm的新型相变存储器CMOS工艺设计了存储介质为Ge2Sb2Te5的硫系化合物随机存储器(Chalcogenide Random Access Memory, CRAM)存储元。根据CRAM的工作原理与特点,从三维热传导模型出发,利用数值方法模拟并分析CRAM存储元中的热场分布及其演化过程。在底层电极与加热层之间引入TiN作为隔热层以实现CRAM存储元与CMOS的热兼容。设计出既满足存储、读写的要求,又能与CMOS电路热兼容的三维CRAM存储单元结构,并计算分析了其内部热场分布,对深入了解CRAM的存储机制,完善CRAM设计提供了相关的数据。
关 键 词: 半导体物理学;存储元结构;数值方法;三维热场
Title: Three-dimensional CRAM memory cell structure design and thermal analysis
Author: LI Juan, WANG Jiafu
Organization: Department of Physical Science and Technology, School of Science, Wuhan University of Technology; State Key Laboratory of Advanced Technology for Materials Synthesis and Processing
Abstract: According to the memory principle and the characteristic of chalcogenide random access memory (CRAM), based on the CMOS craftwork whose feature size is 0.15 μm, the CRAM memory cell using Ge2Sb2Te5 as storage material was designed. With the three-dimensional heat conduction model, this paper used the numerical method to simulate and analyze the thermal field distribution in CRAM cell and its evolvement. The thermal compatibility between CRAM cell and CMOS had been realized by inserting a TiN layer between the heater and the bottom electrode. A structure of three-dimensional CRAM memory cell had finally been designed out which can satisfy the requests of recording, reading-writing and the thermal compatibility between the CRAM cell and the CMOS circuit. The three dimensional thermal field distribution had also been calculated. All above provide useful information in studying the memory mechanism of CRAM more deeply and in promoting the design of the structure of CRAM memory cell.
Key words: semiconductor physics; memory cell structure; numerical methods; three-dimensional thermal field.
发表期数: 2009年2月第3期
引用格式: 李娟,王嘉赋. 三维CRAM存储元结构设计及热场分析[J]. 中国科技论文在线精品论文,2009,2(3):249-253.
 
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