您的位置:首页  > 论文页面

C2H4/GeH4分压比对Si1-xGex∶合金薄膜性质的影响

发表时间:2009-08-15  浏览量:1335  下载量:476
全部作者: 葛瑞萍,夏冬梅,韩平,吴军,俞斐,赵红,俞慧强,谢自力,修向前,张荣,郑有p
作者单位: 南京大学理学院,江苏省光电信息功能材料重点实验室;南京大学杨州光电研究院
摘 要: 用化学气相淀积(chemical vapor deposition, CVD)方法,仅以GeH4,C2H4气体作为反应气源,在Si(100)衬底上生长Ge组分渐变的Si1-xGex∶C合金薄膜。研究了外延生长中C2H4/GeH4分压比对Si1-xGex∶C/Si样品结构特征的影响。结果表明:适量增加C2H4流量、提高C2H4/GeH4分压比不仅可以改善薄膜的表面形貌、降低表面的粗糙度,还有利于获得单晶的Si1-xGex∶C合金薄膜;Si1-xGex∶C合金层总体呈p型导电,样品载流子浓度沿衬底至表面方向逐渐上升。
关 键 词: 微电子与固体电子学;化学气相淀积;Si1-xGex∶C合金薄膜;C2H4/GeH4分压比;载流子浓度
Title: Effects of partial pressure ratio of C2H4/GeH4 on Si1-xGex∶C alloy films
Author: GE Ruiping, XIA Dongmei, HAN Ping, WU Jun, YU Fei, ZHAO Hong, YU Huiqiang, XIE Zili, XIU Xiangqian, ZHANG Rong, ZHENG Youdou
Organization: Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu, School of Natural Sciences, Nanjing University;Academy of Opto�Electronics in Yangzhou, Nanjing University
Abstract: In this paper, Si1-xGex∶C alloy films have been deposited on Si(100) substrates by chemical vapor deposition (CVD) method. Energy disperse spectroscopy, X�ray diffraction, Raman scattering spectra and scanning electron microscope were applied to characterize the Si1-xGex∶C/Si samples. The results show that increasing the flow of the C2H4 and enhancing the partial pressure ratio between C2H4 and GeH4 can improve the surface configuration and lower the roughness of the alloy films. Moreover the alloy films are apt to grow with single crystal tropism with the higher PC2H4/PGeH4. The Si1-xGex∶C alloy layer is p�type and the carrier concentration increases from the substrate to the surface.
Key words: microelectronics and solid state electronics; chemical vapor deposition; Si1-xGex∶C alloy films; PC2H4/PGeH4; carrier concentration
发表期数: 2009年8月第15期
引用格式: 葛瑞萍,夏冬梅,韩平,等. C2H4/GeH4分压比对Si1-xGex∶合金薄膜性质的影响[J]. 中国科技论文在线精品论文,2009,2(15):1573-1577.
 
3 评论数 0
暂无评论
友情链接