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ZnO/ZnMgO单量子阱室温发光性质的研究

发表时间:2011-05-15  浏览量:1106  下载量:548
全部作者: 王彦杰,张世著,何海平,叶志镇
作者单位: 浙江大学硅材料国家重点实验室
摘 要: 采用脉冲激光沉积(pulsed laser deposition, PLD)技术,在Si(111)衬底上生长了不同阱宽的ZnO/ZnMgO 单量子阱。室温下,对于不同阱宽的ZnO/ZnMgO单量子阱样品均观测到阱层激子光致发光现象。随着阱层宽度的减小,发光峰位出现蓝移,这是由量子约束效应引起的。采用一维有限深势阱模型,对于阱宽与激子能量的关系进行理论计算,并与实验值进行比较,二者吻合较好。室温下观察到ZnO/ZnMgO 单量子阱的量子约束效应,说明生长的单量子阱有良好的界面和结晶性质。
关 键 词: 材料物理与化学;ZnO/ZnMgO单量子阱;光致发光;量子约束效应
Title: Room-temperature photoluminescence from ZnO/ZnMgO single quantum well
Author: WNAG Yanjie, ZHANG Shizhu, HE Haiping, YE Zhizhen
Organization: State Key Laboratory of Silicon Materials, Zhejiang University
Abstract: ZnO/ZnMgO single quantum wells (SQWs) with different well layer thickness have been grown on Si (111) substrates by pulsed laser deposition (PLD). Compared with the ZnO single layer, room-temperature photoluminescence resulting from the well regions exhibits a blueshift. Also, the blueshift increases with the decrease of the well thickness. The well layer thickness dependence of the emission energy was calculated by a simple theoretical model and compared with the experimental data. The observation of quantum confinement effects at room temperature suggests the sharp interface and good crystal quality of the grown SQW.
Key words: materials physics and chemistry; ZnO/ZnMgO single quantum well; photoluminescence; quantum confinement effects
发表期数: 2011年5月第9期
引用格式: 王彦杰,张世著,何海平,等. ZnO/ZnMgO单量子阱室温发光性质的研究[J]. 中国科技论文在线精品论文,2011,4(9):841-844.
 
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