您的位置:首页  > 论文页面

ITO表面的CdS一维纳米结构的生长及表征

发表时间:2011-05-15  浏览量:1668  下载量:496
全部作者: 朱钧钧,樊国强,徐仔全,唐建新,李艳青
作者单位: 苏州大学功能纳米与软物质研究院,江苏省碳基功能材料与器件高技术研究重点实验室
摘 要: 为实现一维CdS纳米材料在光电器件的应用,迫切需要实现CdS纳米材料在透明导电基底的直接生长。因此,以氧化铟锡(indium tin oxide,ITO)做基底,在其表面溅射纳米金颗粒作为催化剂,利用热气相沉积法生长CdS一维纳米材料,并通过控制载气流量、气体压强、沉积位置等反应条件,得到规整性、结晶性良好的一维纳米结构,并借助扫描电子显微镜(scanning electron microscopy,SEM)、高分辨透射电子显微镜(high resolution transmission electron microscopy,HR-TEM)、能谱仪(energy-dispersive X-ray spectroscopy,EDX)等表征手段对其生长机理进行分析。
关 键 词: 无机非金属材料;一维CdS纳米结构;ITO;生长机理
Title: Growth and characterization of one-dimensional CdS nanostructures on the ITO substrate
Author: ZHU Junjun, FAN Guoqiang, XU Zaiquan, TANG Jianxin, LI Yanqing
Organization: Institute of Functional Nano and Soft Materials, Soochow University, Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices
Abstract: For the application of CdS nanostructures in optoelectronic devices, it is desirable to synthesize the materials on the indium tin oxide (ITO) glass substrate. In this paper, the orderly and well crystallized CdS nanostructures on the ITO glass substrate are demonstrated via Au nanoparticle-assisted thermal vapor deposition process. The morphology of CdS nanostructures is optimized by controlling the growth parameters in terms of the flow rate of carrier gas, pressure and substrate position in the furnace, etc. The growth mechanism of CdS nanostructures on ITO substrate is analyzed based on the characterization of scanning electron microscopy (SEM), high resolution transmission electron microscopy (HR-TEM) and energy-dispersive X-ray spectroscopy (EDX).
Key words: inorganic nonmetallic material; one-dimensional CdS nanostructures; ITO; growth mechanism
发表期数: 2011年5月第9期
引用格式: 朱钧钧,樊国强,徐仔全,等. ITO表面的CdS一维纳米结构的生长及表征[J]. 中国科技论文在线精品论文,2011,4(9):845-849.
 
0 评论数 0
暂无评论
友情链接