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基于形心计算的硅片光学预对准

发表时间:2011-08-31  浏览量:1504  下载量:524
全部作者: 刘仁强,刘品宽,黄春霞
作者单位: 上海交通大学机械系统与振动国家重点实验室
摘 要: 提出一种基于形心计算的硅片光学预对准方法,分别用激光位移传感器从硅片径向测量硅片形心,用透过式激光传感器测量硅片定位凹槽角度位置。提出采用径跳动态误差补偿的方法减小转台径跳和偏摆对形心测量的影响。通过粗调硅片形心和定位凹槽角度,再精调硅片定位凹槽角度2个步骤,提高硅片预对准台重复定位精度。实验结果表明:采用转台径向跳动误差补偿技术后,定位凹槽的预对准定位精度可达30 μrad,硅片形心位置的预对准定位精度达1 μm.
关 键 词: 机械制造自动化;微电子制造;光学预对准;硅片形心;误差补偿
Title: A silicon wafer optical prealignment method based on shape center method
Author: LIU Renqiang, LIU Pinkuan, HUANG Chunxia
Organization: State Key Laboratory of Mechanical System and Vibration, Shanghai Jiaotong University
Abstract: A wafer prealignment method is designed based on shape center measurement method. The wafer’s shape center is measured by laser displacement sensor from wafer’s radial direction, and the orientation of wafer is measured by notch angle detection using photoelectric laser sensor that detects the position of the wafer’s periphery as a rotation stage rotates. Dynamic error compensation method is applied to eliminate the radial runout effect using two inductance sensor measure the rotation stage’s rotation center. The wafer’s desired position and orientation is obtained from two steps: firstly, coarse alignment is made by adjusting the wafer’s shape center to be concentric with rotation stage’s rotation center and notch angle point to desires orientation, then precise measurement and adjustment is made on the wafer’s notch angle. The experimentation has proved that the use of the runout compensation method has improved the prealignment precision of notch angle orientation to 30 micradians and wafer center to 1 micron.
Key words: mechanical manufacture and automation; microelectronics manufacture; optical prealignment; shape center of silicon wafer; error compensation
发表期数: 2011年8月第16期
引用格式: 刘仁强,刘品宽,黄春霞. 基于形心计算的硅片光学预对准[J]. 中国科技论文在线精品论文,2011,4(16):1469-1475.
 
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