您的位置:首页  > 论文页面

退火对ZnO纳米杆/n+-Si异质结I-V特性的影响

发表时间:2011-11-30  浏览量:1291  下载量:558
全部作者: 黄晖辉,方国家,李颂战,龙浩,莫小明,王皓宁,赵兴中
作者单位: 武汉大学物理科学与技术学院
摘 要: 采用水热法,在n型重掺杂的硅片(100)上生长了垂直致密的ZnO纳米杆,并制备了ZnO纳米杆/n+-Si异质结。研究在630℃下不同退火时间对ZnO纳米杆/n+-Si异质结I-V特性的影响。实验表明:随着退火时间的增加,器件I-V曲线的整流性能得到明显提高,并对其原因进行了分析。
关 键 词: 微电子学与固体电子学;ZnO纳米杆;异质结;I-V特性;退火
Title: Influence of annealing on I-V characteristic of ZnO nanorods/n+-Si heterojunction
Author: HUANG Huihui, FANG Guojia, LI Songzhan, LONG Hao, MO Xiaoming, WANG Haoning, ZHAO Xingzhong
Organization: School of Physics and Technology, Wuhan University
Abstract: In this paper, the ZnO nanorods/n+-Si heterojunction was fabricated by growing vertical and compact ZnO nanorods on heavily doped n type silicon wafer using a low-temperature aqueous solution method. The influences of different annealing time under 630℃ on the I-V characteristic of the ZnO nanorods/n+-Si heterojunction were studied, and the experimental results revealed that the rectification behaviours of the I-V curves were greatly enhanced by increasing the annealing time, and the reason was studied in this work.
Key words: mirco electronics and solid state electronics; ZnO nanorods; heterojunction; I-V characteristics; annealing
发表期数: 2011年11月第22期
引用格式: 黄晖辉,方国家,李颂战,等. 退火对ZnO纳米杆/n+-Si异质结I-V特性的影响[J]. 中国科技论文在线精品论文,2011,4(22):2041-2043.
 
0 评论数 0
暂无评论
友情链接