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InGaN异质结太阳电池转换效率计算

发表时间:2011-11-30  浏览量:1303  下载量:402
全部作者: 刘斌,王睿,胡海楠,张荣,谢自力,陈敦军,李烨操,文博,江若琏,韩平,郑有炓
作者单位: 南京大学电子科学与工程学院
摘 要: 根据p-n结型太阳电池满足的电流-电压方程,研究计算铟镓氮(InGaN)单结及InGaN与其他半导体材料组成的异质双结太阳电池的转换效率。研究发现:单结太阳电池的最大转换效率达到31.9%,取得此转换效率的InxGa1-xN禁带宽度Eg为1.33 eV,对应的In组分x为0.77. 设计并计算了InGaN/GaP,InGaN/GaAs,InGaN/Si和InGaN/Ge 4种异质双结电池的转换效率,比较它们的结果发现:In0.73Ga0.27N/Ge的禁带宽度最佳组合为1.54 eV/0.66 eV,转换效率达到46.7%,具有可行的实际意义。
关 键 词: 微电子学与固体电子学;太阳电池转换效率;电流-电压方程;Ⅲ族氮化物半导体
Title: Calculation of conversion efficiency of InGaN-based heterostructure solar cells
Author: LIU Bin, WANG Rui, HU Hainan, ZHANG Rong, XIE Zili, CHEN Dunjun, LI Yecao, WEN Bo, JIANG Ruolian, HAN Ping, ZHENG Youdou
Organization: School of Electronic Science and Engineering, Nanjing University
Abstract: In this paper, based on the current-voltage equation for p-n junction solar cells, the conversion efficiency (CE) of single-tandem and double-tandem InGaN as well as double-junction heterostructure InGaN-based solar cells (SCs) has been calculated. It is found that with In composition x~0.77 and band gap of InxGa1-xN Eg ~ 1.33 eV, the CE of single-junction SCs achieves up to 31.9%. The CE of four type double-tandem heterostructure InGaN-based SCs, including InGaN/GaP, InGaN/GaAs, InGaN/Si, InGaN/Ge, are calculated. The results indicate that In0.73Ga0.27N/Ge heterostructure double-tandem SC has the optimized band gap match~1.54 eV/0.66 eV to solar spectrum, whose CE can reach up to 46.7%, which is experimental feasibility.
Key words: microelectronics and solid state electronics; conversion efficiency of solar cells; current-voltage equation; Ⅲ-nitride semiconductors
发表期数: 2011年11月第22期
引用格式: 刘斌,王睿,胡海楠,等. InGaN异质结太阳电池转换效率计算[J]. 中国科技论文在线精品论文,2011,4(22):2049-2054.
 
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