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InGaN异质结太阳电池转换效率计算
发表时间：2011-11-30 浏览量：1783 下载量：502
| 全部作者： | 刘斌，王睿，胡海楠，张荣，谢自力，陈敦军，李烨操，文博，江若琏，韩平，郑有炓 |
| 作者单位： | 南京大学电子科学与工程学院 |
| 摘 要： | 根据p-n结型太阳电池满足的电流-电压方程，研究计算铟镓氮（InGaN）单结及InGaN与其他半导体材料组成的异质双结太阳电池的转换效率。研究发现：单结太阳电池的最大转换效率达到31.9%，取得此转换效率的InxGa1-xN禁带宽度Eg为1.33 eV，对应的In组分x为0.77. 设计并计算了InGaN/GaP，InGaN/GaAs，InGaN/Si和InGaN/Ge 4种异质双结电池的转换效率，比较它们的结果发现：In0.73Ga0.27N/Ge的禁带宽度最佳组合为1.54 eV/0.66 eV，转换效率达到46.7%，具有可行的实际意义。 |
| 关 键 词： | 微电子学与固体电子学；太阳电池转换效率；电流-电压方程；Ⅲ族氮化物半导体 |
| Title： | Calculation of conversion efficiency of InGaN-based heterostructure solar cells |
| Author： | LIU Bin, WANG Rui, HU Hainan, ZHANG Rong, XIE Zili, CHEN Dunjun, LI Yecao, WEN Bo, JIANG Ruolian, HAN Ping, ZHENG Youdou |
| Organization： | School of Electronic Science and Engineering, Nanjing University |
| Abstract： | In this paper, based on the current-voltage equation for p-n junction solar cells, the conversion efficiency (CE) of single-tandem and double-tandem InGaN as well as double-junction heterostructure InGaN-based solar cells (SCs) has been calculated. It is found that with In composition x~0.77 and band gap of InxGa1-xN Eg ~ 1.33 eV, the CE of single-junction SCs achieves up to 31.9%. The CE of four type double-tandem heterostructure InGaN-based SCs, including InGaN/GaP, InGaN/GaAs, InGaN/Si, InGaN/Ge, are calculated. The results indicate that In0.73Ga0.27N/Ge heterostructure double-tandem SC has the optimized band gap match~1.54 eV/0.66 eV to solar spectrum, whose CE can reach up to 46.7%, which is experimental feasibility. |
| Key words： | microelectronics and solid state electronics; conversion efficiency of solar cells; current-voltage equation; Ⅲ-nitride semiconductors |
| 发表期数： | 2011年11月第22期 |
| 引用格式： | 刘斌，王睿，胡海楠，等. InGaN异质结太阳电池转换效率计算[J]. 中国科技论文在线精品论文，2011，4（22）：2049-2054. |
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