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蓝宝石上硅基超高速光导开关THz波辐射特性的研究

发表时间:2012-08-15  浏览量:1641  下载量:635
全部作者: 杜忠勋,韩美锐,匡登峰
作者单位: 南开大学现代光学研究所,光电信息技术科学教育部重点实验室
摘 要: 研究了以O+注入的蓝宝石上硅(silicon-on-sapphire,SOS)作为超高速光导开关的基底材料,并且用原子力显微镜探针阳极氧化加工的纳米氧化钛线作为光导天线的功能间隙大孔径光导开关产生太赫兹(terahertz, THz)波的辐射特性。利用有限时域差分方法(finite difference time domain,FDTD)对光导开关辐射太赫兹波过程进行较严格的理论分析,对比了载流子寿命减小到亚皮秒量级、光导间隙减小到亚微米量级时THz时域波形的变化,得到了小于100 fs脉宽的太赫兹脉冲。
关 键 词: 光学;蓝宝石上硅基;光导开关;太赫兹波;时域有限差分
Title: Study on THz wave radiation characteristics of ultra high-speed silicon-on-sapphire photoconductive switch
Author: DU Zhongxun, HAN Meirui, KUANG Dengfeng
Organization: Key Laboratory of Opto-electronic Information Science and Technology, Ministry of Education, Institute of Modern Optics, Nankai University
Abstract: This paper investigates the characteristics of THz wave radiation generated from a ultra high-speed photoconductive switch on the substrate of heavy O+ implanted silicon-on-sapphire (SOS) and the nano titanium oxide line fabricated with atomic force microscope tip induced anodic oxidation is used as the photoconductive gap. By using the finite difference time domain (FDTD) method, the paper compares the THz waveforms for the photoconductive switch radiation when the carrier lifetime is reduced to subpicosecond order and photoconductive gap is reduced to submicron order. The THz pulse less than 100fs is obtained.
Key words: optics; silicon-on-sapphire; photoconductive switch; terahertz wave; finite difference time domain
发表期数: 2012年8月第15期
引用格式: 杜忠勋,韩美锐,匡登峰. 蓝宝石上硅基超高速光导开关THz波辐射特性的研究[J]. 中国科技论文在线精品论文,2012,5(15):1410-1416.
 
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