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高温退火对GaMnN薄膜结构和磁性的影响

发表时间:2012-08-15  浏览量:1285  下载量:409
全部作者: 胡泊,刘玫,满宝元,许士才,姜守振
作者单位: 山东师范大学物理与电子科学学院
摘 要: 通过激光分子束外延(laser molecular beam epitaxy, LMBE)技术生长出具有顺磁性的非晶掺杂Mn元素的GaN薄膜,经过高温退火转变成结晶的铁磁性薄膜。经X射线衍射(X-ray diffraction, XRD),拉曼光谱(Raman spectrum, RS),扫描电镜(scanning electron microscope, SEM),X射线光电子谱(X-ray photoelectron spectroscopy, XPS),磁性测量验证最优的退火温度为950℃,在此条件下,样品结晶质量和磁性都最强。在NH3气保护下样品未被氧化,没有其他杂质相,样品的铁磁性为GaMnN薄膜本身的属性。
关 键 词: 凝聚态物理;GaMnN;稀磁半导体;退火
Title: High temperature annealing effects on structure and magnetic property of GaMnN film
Author: HU Bo, LIU Mei, MAN Baoyuan, XU Shicai, JIANG Shouzhen
Organization: College of Physics and Electronics, Shandong Normal University
Abstract: Amorphous gallium nitride doped with Mn thin films which present paramagnetism were deposited by the laser molecular beam epitaxy (LMBE). After annealed at high temperatures, the ferromagnetic nanocrystalline films were obtained. The optimal annealing temperature is 950℃ by testing of X-ray diffraction (XRD), Raman spectrum (RS), scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy and magnetic measurement. These samples have the best quality and strongest ferromagnetism. The annealed samples had not been oxidized in the ammonia protection and no other impurity phases were observed. The ferromagnetism is the intrinsic property of GaMnN film.
Key words: condensed matter physics; GaMnN; diluted magnetic semiconductor; annealing
发表期数: 2012年8月第15期
引用格式: 胡泊,刘玫,满宝元,等. 高温退火对GaMnN薄膜结构和磁性的影响[J]. 中国科技论文在线精品论文,2012,5(15):1432-1437.
 
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