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电子束蒸发制备用于薄膜太阳能电池的CdS多晶薄膜

发表时间:2012-08-15  浏览量:1277  下载量:338
全部作者: 耿雷,方力,徐岭,苏为宁,于瑶,肖金荣,徐骏,马忠元
作者单位: 南京大学电子科学与工程学院;南京大学物理学院
摘 要: 利用电子束蒸发方法,在p型硅及玻璃衬底上制备了CdS多晶薄膜。对不同衬底温度制备的样品,通过X射线衍射(X-ray diffraction,XRD)、原子力显微镜(atomic force microscope, AFM)、光学透过率谱和吸收谱等测试手段研究CdS多晶薄膜结构和光电性能。结果表明:CdS薄膜表面均匀、致密,均表现出沿<002>晶向的择优生长,随着衬底温度的升高,晶粒尺寸增大,择优取向增强。CdS薄膜的光学带隙在2.42~2.48 eV之间,随着衬底温度的升高而升高。CdS多晶薄膜与p型硅衬底形成的异质结表现出良好的整流特性和光伏效应,适合作为薄膜太阳能电池的窗口层。
关 键 词: 微电子学与固体电子学;CdS;多晶薄膜;电子束蒸发;薄膜太阳能电池
Title: Electron beam evaporated cadmium sulphide thin films for thin-film solar cell applications
Author: GENG Lei, FANG Li, XU Ling, SU Weining, YU Yao, XIAO Jinrong, XU Jun, MA Zhongyuan
Organization: School of Electronic Science and Engineering, Nanjing University; School of Physics, Nanjing University
Abstract: Cadmium sulphide (CdS) thin films were deposited by electron beam evaporation at different substrate temperatures. The structural characteristics were studied by the X-ray diffraction (XRD) pattern. The CdS films are polycrystalline, exhibiting a preferred orientation along the (002) plane. Atomic force microscopy (AFM) reveals that the root mean square (RMS) roughness of the films increases as the substrate temperature increases. The optical band gap values of CdS films increase slightly with the increasing substrate temperature, in the range of 2.42-2.48 eV. The electrical characteristics of CdS/p-Si heterojunctions were investigated. Excellent rectifying and photovoltaic properties were observed.
Key words: microelectronics and solid state electronics; CdS; polycrstalline thin films; electron beam evaporation; thin-film solar cell
发表期数: 2012年8月第15期
引用格式: 耿雷,方力,徐岭,等. 电子束蒸发制备用于薄膜太阳能电池的CdS多晶薄膜[J]. 中国科技论文在线精品论文,2012,5(15):1454-1459.
 
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