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Q开关Nd:YVO4激光对硅片开微孔的研究
发表时间：2012-09-30 浏览量：1436 下载量：388
| 全部作者： | 张为国，梁宗存，沈辉，庄树钦，林汉德 |
| 作者单位： | 中山大学太阳能系统研究所；广东金刚玻璃科技股份有限公司 |
| 摘 要： | 为解决激光在制备某些特殊结构的晶体硅太阳电池过程中出现开微孔锥度比较大的问题，采用Q开关Nd:YVO4激光对晶体硅片进行开微孔研究。根据激光器的特性及激光束和硅片相互作用过程的复杂性，得出孔径、孔深、上下孔径比与激光开孔工艺参数并非简单的线性关系，并就减少激光开孔常出现的圆台锥度提出一套低成本的可行性方案，并最终成功地在0.22 mm厚的硅片上得到上下孔径比为7∶6的微孔，能够较好地满足某些特殊结构如晶体硅发射极卷包(emitter wrap through，EWT)太阳电池的后续制备。 |
| 关 键 词： | 太阳能；晶体硅发射极卷包太阳电池；激光开微孔；晶体硅；上下孔径比；锥度 |
| Title： | Research on Q-switch Nd: YVO4 laser to open tiny holes on the silicon |
| Author： | ZHANG Weiguo, LIANG Zongcun, SHEN Hui, ZHUANG Shuqin, LIN Hande |
| Organization： | Institute for Solar Energy Systems of Sun Yat-SenUniversity; Guangdong Golden Glass Technologies Limired |
| Abstract： | To solve the heavy taper problem in the preparation of making the special structure of crystalline silicon solar cells, Q-switch Nd:YVO4 laser was used to open tiny holes on silicon wafer. According to the characteristics of laser, the complexity of interaction of the laser beam with the silicon wafer, it was found that the relationship between parameters of holes-opening process and the holes-diameter, depth, and ratio of upper and bottom diameter was not a simple linear. Furthermore, the research provided a set of feasible and low-cost scheme to reduce the taper of the round table when opening holes by laser. Finally, a 7∶6 ratio of upper and bottom diameter in a 0.22 mm thick silicon wafer was obtained successfully, which could meet the following step process of some special structure crystalline silicon solar cells such as the emitter wrap through (EWT) type well. |
| Key words： | solar energy; emitter wrap through solar cell; laser opening tiny holes; crystalline silicon; ratio of upper and bottom diameter; taper |
| 发表期数： | 2012年9月第18期 |
| 引用格式： | 张为国，梁宗存，沈辉，等. Q开关Nd:YVO4激光对硅片开微孔的研究[J]. 中国科技论文在线精品论文，2012，5（18）：1745-1753. |
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