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化学液相沉积Al2O3薄膜钝化p型黑硅
发表时间：2013-11-30 浏览量：1902 下载量：710
| 全部作者： | 李永祥，郭婉，孙平杨，李葛亮，刘爱民 |
| 作者单位： | 大连理工大学物理与光电工程学院 |
| 摘 要： | 采用易操作、成本低的化学液相沉积（chemical liquid phase deposition，CLD）法在p型黑硅(black silicon, b-Si)衬底上沉积均匀的Al2O3钝化层，研究不同退火温度（300，600，900℃）对钝化层物理特性及钝化效果的影响。实验发现：Al2O3钝化层增强了b-Si的反射率，钝化层中的氧元素含量少导致CLD出来的Al2O3中固定负电荷含量较少，并且固定负电荷密度随退火温度的增加而减少。通过瞬态表面光伏谱（surface photovoltage，SPV）测量发现，300~600℃之间的退火温度能够获得较好的钝化效果。 |
| 关 键 词： | 微电子学；Al2O3；表面钝化；黑硅；化学液相沉积 |
| Title： | Passivation of p-type black silicon with Al2O3 deposited by chemical liquid phase deposition |
| Author： | LI Yongxiang, GUO Wan, SUN Pingyang, LI Geliang, LIU Aimin |
| Organization： | School of Physics and Optoelectronic Technology, Dalian University of Technology |
| Abstract： | In this paper, uniform Al2O3 films were deposited on p-type black silicon (b-Si) substrates by simple and low-cost chemical liquid phase deposition (CLD). The influence of different annealing temperatures on physics properties and passivation effect of Al2O3 films were investigated. After annealed at 300, 600, 900 ℃, the extremely low reflectance of b-Si increased. For the lack of interstitial O near the passivation interface, no obvious fixed negative charge was measured. Yet the responses of transient surface photovoltage (SPV) demonstrated that a better passivation effect of p-type b-Si can be obtained after annealed during the temperature from 300 to 600 ℃ by Al2O3. |
| Key words： | microelectronics; Al2O3; surface passivation; black silicon; chemical liquid phase deposition |
| 发表期数： | 2013年11月第22期 |
| 引用格式： | 李永祥，郭婉，孙平杨，等. 化学液相沉积Al2O3薄膜钝化p型黑硅[J]. 中国科技论文在线精品论文，2013，6（22）：2142-2146. |
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