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化学液相沉积Al2O3薄膜钝化p型黑硅

发表时间:2013-11-30  浏览量:1334  下载量:532
全部作者: 李永祥,郭婉,孙平杨,李葛亮,刘爱民
作者单位: 大连理工大学物理与光电工程学院
摘 要: 采用易操作、成本低的化学液相沉积(chemical liquid phase deposition,CLD)法在p型黑硅(black silicon, b-Si)衬底上沉积均匀的Al2O3钝化层,研究不同退火温度(300,600,900℃)对钝化层物理特性及钝化效果的影响。实验发现:Al2O3钝化层增强了b-Si的反射率,钝化层中的氧元素含量少导致CLD出来的Al2O3中固定负电荷含量较少,并且固定负电荷密度随退火温度的增加而减少。通过瞬态表面光伏谱(surface photovoltage,SPV)测量发现,300~600℃之间的退火温度能够获得较好的钝化效果。
关 键 词: 微电子学;Al2O3;表面钝化;黑硅;化学液相沉积
Title: Passivation of p-type black silicon with Al2O3 deposited by chemical liquid phase deposition
Author: LI Yongxiang, GUO Wan, SUN Pingyang, LI Geliang, LIU Aimin
Organization: School of Physics and Optoelectronic Technology, Dalian University of Technology
Abstract: In this paper, uniform Al2O3 films were deposited on p-type black silicon (b-Si) substrates by simple and low-cost chemical liquid phase deposition (CLD). The influence of different annealing temperatures on physics properties and passivation effect of Al2O3 films were investigated. After annealed at 300, 600, 900 ℃, the extremely low reflectance of b-Si increased. For the lack of interstitial O near the passivation interface, no obvious fixed negative charge was measured. Yet the responses of transient surface photovoltage (SPV) demonstrated that a better passivation effect of p-type b-Si can be obtained after annealed during the temperature from 300 to 600 ℃ by Al2O3.
Key words: microelectronics; Al2O3; surface passivation; black silicon; chemical liquid phase deposition
发表期数: 2013年11月第22期
引用格式: 李永祥,郭婉,孙平杨,等. 化学液相沉积Al2O3薄膜钝化p型黑硅[J]. 中国科技论文在线精品论文,2013,6(22):2142-2146.
 
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