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n型ZnO纳米棒/p型金刚石异质结微分负阻特性研究

发表时间:2014-02-15  浏览量:1602  下载量:415
全部作者: 桑丹丹,成绍恒,王启亮,裴晓强,刘钧松,李红东
作者单位: 吉林大学超硬材料国家重点实验室;徐州工程学院数学与物理科学学院;兰州物理研究所
摘 要: 利用热蒸发法,在硼掺杂化学气相沉积(chemical vapor deposition, CVD)多晶金刚石膜上生长ZnO纳米棒(nanorods,NRs),制备出n型ZnO NRs/p型金刚石异质结结构。当金刚石为轻掺杂时,n型ZnO NRs/p型金刚石异质结具有整流特性;而当金刚石重掺杂到简并态时,n型ZnO NRs/p型金刚石异质结出现微分负阻现象。研究表明微分负阻现象是由异质结的隧穿电流引起。
关 键 词: 凝聚态物理;ZnO纳米棒;硼掺杂化学气相沉积金刚石;n型ZnO纳米棒/p型金刚石异质结;微分负阻
Title: Negative differential resistance of n-ZnO nanorods/p-diamond heterojunction
Author: SANG Dandan, CHENG Shaoheng, WANG Qiliang, PEI Xiaoqiang, LIU Junsong, LI Hongdon
Organization: State Key Laboratory of Superhard Materials, Jilin University; School of Mathematics and Physical Sciences, Xuzhou Institute of Technology; Lanzhou Institute of Physics
Abstract: By thermal vapor transport method, ZnO nanorods (NRs) were grown on boron-doped chemical vapor deposited (CVD) polycrystalline diamond films. The n-ZnO NRs/p-diamond heterojunctions were constructed and show typical rectifying current-voltage behavior for lightly boron-doped diamond. When the p-type diamond is degenerated with heavily boron doping, a negative differential resistance phenomenon is presented for the heterojunctions. The origin of the NDR is attributed to the tunneling current occurred in the hybrid structure.
Key words: condensed matter physics; ZnO nanorods; B-doped chemical vapor deposited diamond; n-ZnO nanorods/p-diamond heterojunction; negative differential resistance
发表期数: 2014年2月第3期
引用格式: 桑丹丹,成绍恒,王启亮,等. n型ZnO纳米棒/p型金刚石异质结微分负阻特性研究[J]. 中国科技论文在线精品论文,2014,7(3):236-241.
 
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