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B掺杂金刚石膜上ZnO:Eu NRs的生长及性质研究

发表时间:2014-08-15  浏览量:1403  下载量:400
全部作者: 于琦,马一博,裴晓强,刘钧松,桑丹丹,杨怡舟,成绍恒,王启亮,李红东
作者单位: 吉林大学超硬材料国家重点实验室;陕西理工学院材料科学与工程学院
摘 要: 利用水热合成法,在B掺杂p型金刚石膜上生长Eu掺杂ZnO纳米棒(Eu doped zinc oxide nanorods, ZnO:Eu NRs),并研究其形貌变化、发光及半导体异质结电学特性等与Eu掺杂浓度的关系。结果表明:随Eu掺杂浓度的增加,ZnO:Eu NRs出现尖端聚集现象。Eu掺杂提高了ZnO纳米棒紫外发光强度。制作ZnO:Eu NRs/p型金刚石异质结,其表现出良好的整流特性,并可能出现微分负阻现象。
关 键 词: 半导体物理学;ZnO;Eu掺杂;ZnO:Eu/p型金刚石异质结;整流特性
Title: Growth and properties of ZnO: Eu NRs on B-doped diamond film
Author: YU Qi, MA Yibo, PEI Xiaoqiang, LIU Junsong, SANG Dandan, YANG Yizhou, CHENG Shaoheng, WANG Qiliang, LI Hongdong
Organization: State Key Laboratory of Superhard Materials, Jilin University; School of Materials Science and Engineering, Shaanxi University of Technology
Abstract: In this paper, by hydrothermal method, the Eu doped zinc oxide nanorods (ZnO: Eu NRs) have been fabricated on p-type B-doped diamond films. The morphology, ultraviolet photoluminescence (UV-PL) and heterojunction electrical characteristic of the ZnO: Eu NRs are investigated. With increasing the doping level of Eu, a phenomenon of top aggregation emerges for the ZnO: Eu NRs, and the intensity of the UV-PL emission is enhanced. For the current-voltage measurements of the constructed ZnO: Eu NRs/p-diamond heterojunctions, a rectifying behavior is presented, and a possible negative differential resistance characteristic in the forward voltage is observed.
Key words: semiconductor physics; ZnO; Eu doped; ZnO: Eu/p-diamond heterojunction; rectifying characteristic
发表期数: 2014年8月第15期
引用格式: 于琦,马一博,裴晓强,等. B掺杂金刚石膜上ZnO:Eu NRs的生长及性质研究[J]. 中国科技论文在线精品论文,2014,7(15):1562-1566.
 
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