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原子层沉积法中AlOx薄膜厚度对表面钝化效果的研究
发表时间：2015-08-15 浏览量：1948 下载量：804
| 全部作者： | 谢洪丽，张炳烨，王雨钧，刘爱民 |
| 作者单位： | 大连理工大学物理与光电工程学院 |
| 摘 要： | 采用原子层沉积（atomic layer deposition，ALD）法在P型制绒单晶硅（crystalline silicon, c-Si）表面生长不同厚度的AlOx薄膜，通过改变生长周期控制AlOx薄膜的厚度。利用场发射扫描电镜（field emission scanning electron microscopy，FESEM）对其表面形貌进行表征，并对实验样品进行反射率的测试，结果发现，随着AlOx钝化膜厚度的增加，其反射率由10.40%降低至0.96%. 实验结果表明，AlOx薄膜不仅有较好的钝化效果，还有降低反射率的作用。同时，对不同薄膜厚度的样品进行少数载流子有效寿命（τeff）的测量，结果发现，随着AlOx薄膜厚度的增加，少数载流子寿命由6.67 μs增加至29.28 μs（当Δp=1×1015 cm-3时），且当AlOx薄膜厚度为32 nm时少数载流子寿命最高。进一步研究AlOx薄膜厚度对P型c-Si钝化效果的影响，对样品进行电容-电压（C-V）测试，发现随着薄膜厚度的增加，C-V曲线有一个正向移动，表明AlOx薄膜中确实存在固定负电荷，并且发现薄膜厚度为32 nm时的固定负电荷数（Qf）最高（Qf=-9.51×1012 cm-2），较高的Qf说明对P型半导体，AlOx薄膜的场钝化效应更显著。 |
| 关 键 词： | 半导体物理学；AlOx；表面钝化；准稳态光电导；有效寿命 |
| Title： | Investigation on surface passivation mechanism of AlOx thin film thickness by atomic layer deposition |
| Author： | XIE Hongli, ZHANG Bingye, WANG Yujun, LIU Aimin |
| Organization： | School of Physics and Optoelectronic Engineering, Dalian University of Technology |
| Abstract： | Various thicknesses of AlOx thin films were fabricated on P-type textured crystalline silicon (c-Si) wafers by atomic layer deposition (ALD). The thickness of AlOx thin films was altered through changing the deposition cycles. Using field emission scanning electron microscopy (FESEM), the surface morphology structures were characterized. The reflectances of the samples were also tested. Through adjusting the thicknesses of AlOx thin films, the optical and electrical properties were significant improved. The reflectances of various thicknesses of AlOx thin films were decreased from 10.40% to 0.96% with the increasing of thickness, which is demonstrated that the AlOx thin films show an effective antireflection properties. Moreover, the passivation effect of AlOx thin films was identified. The effective minority carrier life time (τeff) exhibits a significant improvement with the variety of film thicknesses from 6.67 μs to 29.28 μs (when Δp=1×1015 cm-3). When the thickness of AlOx thin films is 32 nm, the life time (τeff) arrives at the highest. The capacity-voltage (C-V) was induced to explain the increasing of τeff. It can be found that it shows a large shift of C-V curves in positive direction with the increasing of thickness for all samples, indicating the existence of negative equivalent oxide charge density (Qf). It also find that when the thickness of AlOx thin films is 32 nm, the Qf arrives at highest (Qf=-9.51×1012 cm-2). The high Qf indicates that the AlOx thin films can provide better field-effect passivation effects in P-type semiconductors. |
| Key words： | semiconductor physics; AlOx; surface passivation; quasi steady state photo conductance; effective lifetime |
| 发表期数： | 2015年8月第15期 |
| 引用格式： | 谢洪丽，张炳烨，王雨钧，等. 原子层沉积法中AlOx薄膜厚度对表面钝化效果的研究[J]. 中国科技论文在线精品论文，2015，8（15）：1608-1613. |
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