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单晶硅体寿命与表面复合速率的分离

发表时间:2015-08-15  浏览量:1731  下载量:870
全部作者: 宋成源,李平,王宇轩,王禹均,刘爱民
作者单位: 大连理工大学物理与光电工程学院
摘 要: 表面复合速率和体寿命是硅半导体材料的2个重要参数。根据单晶硅中非平衡少数载流子浓度的一维连续性方程,在准稳态光电导(quasi-steady state photoconductance,QSSPC)测试模式下通过数值分析计算,最终将表面复合速率与体寿命分离开。通过计算不同电阻率的P型单晶硅,在高注入情况下,相较恒定常数的体寿命,依赖于非平衡载流子浓度变化的体寿命严重影响载流子的分布。
关 键 词: 半导体物理学;硅太阳能电池;准稳态光电导;体寿命;表面复合速率
Title: Separation of bulk lifetime and surface recombination velocity in silicon wafer
Author: SONG Chengyuan, LI Ping, WANG Yuxuan, WANG Yujun, LIU Aimin
Organization: School of Physics and Optoelectronic Engineering, Dalian University of Technology
Abstract: The surface recombination velocity and the bulk lifetime of minority carriers are important electronic properties for silicon solar cell materials. In this work, according to the one-dimensional continuity equation of non equilibrium minority carrier concentration in silicon wafer, and through the numerical analysis under quasi-steady state photoconductance (QSSPC) test model, we separate bulk time and surface recombination velocity. Based on the calculation on the P silicon wafer with different resistivities, we find that bulk lifetime depending upon carrier density influences the density distribution vitally rather than taking bulk lifetime as a constant at high injection level.
Key words: semiconductor physics; silicon solar cells; quasi-steady state photoconductance; bulk lifetime; surface recombination velocity
发表期数: 2015年8月第15期
引用格式: 宋成源,李平,王宇轩,等. 单晶硅体寿命与表面复合速率的分离[J]. 中国科技论文在线精品论文,2015,8(15):1614-1620.
 
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