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PN结碰撞电离积分与外加偏压关系仿真研究

发表时间:2015-09-30  浏览量:1386  下载量:372
全部作者: 马克强,熊威,黄海猛,陈星弼
作者单位: 电子科技大学电子薄膜与集成器件国家重点实验室
摘 要: 从MEDICI软件中关于碰撞电离积分的Chynoweth模型出发,在Matlab中对碰撞电离积分与PN结外加反向电压的关系运用曲线拟合,得到了与MEDICI仿真结果更为吻合的Miller关系式。同时给出了掺杂浓度与Miller公式中S参数的经验表达式。通过对仿真结果进行分析,验证了这种仿真方法的正确性。
关 键 词: 半导体技术;雪崩击穿;碰撞电离;数据拟合
Title: Simulation study on the relationship of impact ionization integrals and applied voltage for PN junction
Author: MA Keqiang, XIONG Wei, HUANG Haimeng, CHEN Xingbi
Organization: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China
Abstract: This paper is started with the Chynoweth model of impact ionization integrals in the MEDICI simulator. In order to determine the relationship of ionization integrals and the reversed voltage applying to PN junction, i.e., Miller formula, curve fitting tool in Matlab is performed. An empirical Miller formula is obtained, which is more consistent with the simulation results by MEDICI. At the same time, an approximate formula about the relationship of doping concentration and the S parameter in Miller formula are proposed. The analysis on the results verifies the correctness of the simulation method.
Key words: semiconductor technology; avalanche breakdown; impact ionization; simulation
发表期数: 2015年9月第18期
引用格式: 马克强,熊威,黄海猛,等. PN结碰撞电离积分与外加偏压关系仿真研究[J]. 中国科技论文在线精品论文,2015,8(18):1906-1909.
 
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