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单晶硅纳米刻划加工试验研究

发表时间:2017-04-27  浏览量:1431  下载量:184
全部作者: 张俊杰,姜雨琦,王站峰,闫永达,孙涛
作者单位: 哈尔滨工业大学精密工程研究所
摘 要: 采用MTS Indenter XP和圆锥探针对具有(100)、(110)、(111) 3种不同晶体取向的单晶硅进行纳米压痕和纳米刻划试验,研究材料微观变形与机械响应之间的关系。通过赫兹弹性理论拟合压入阶段的载荷-位移曲线,获得了单晶硅的杨氏模量。同时,开展分子动力学仿真,并从杨氏模量和摩擦系数曲线形貌两方面进行仿真与试验的对比与验证。研究结果显示,单晶硅在纳米刻划阶段发生结构化相变,造成机械响应曲线的迅速变化。特别地,在刻划阶段相变与位错滑移之间的竞争导致摩擦系数呈现震荡特性。分子动力学仿真得到的单晶硅杨氏模量和摩擦系数曲线形貌与试验结果相吻合。
关 键 词: 机械制造自动化;单晶硅;纳米刻划;晶体取向;试验与仿真对比
Title: Experimental investigation of nanoscratching of monocrystalline silicon
Author: ZHANG Junjie, JIANG Yuqi, WANG Zhanfeng, YAN Yongda, SUN Tao
Organization: Center for Precision Engineering, Harbin Institute of Technology
Abstract: In the present work, nanoindentation and nanoscratching of monocrystalline silicon with three different crystallographic orientations [(100), (110), (111)] are performed by using the MTS Indenter XP and a conical-shaped probe. The correlation between microscopic deformation of silicon and mechanical response is studied. The YOUNG's modulus of silicon is derived by fitting the load-displacement curve by using the Hertzian elastic theory. Meanwhile, molecular dynamics simulations of nanoscratching are performed, and the comparison between molecular dynamics data and experimental results in terms of values of YOUNG's modulus and profile of friction coefficient-displacement curve are performed. The results show that the nanoscratching-induced structural phase change of silicon leads to rapid evolution of mechanical response. Particularly, in the scratching stage, the competition between phase transformation and dislocation slip leads to strong characteristics of fluctuation of friction coefficient-displacement curve. It is found that the value of YOUNG's modulus and profile of friction coefficient-displacement curve obtained from molecular dynamics simulations are consistent with that from experiments.
Key words: mechanical manufacturing automation; monocrystalline silicon; nanoscratching; crystallographic orientation; comparison between experiment and simulation
发表期数: 2017年4月第8期
引用格式: 张俊杰,姜雨琦,王站峰,等. 单晶硅纳米刻划加工试验研究[J]. 中国科技论文在线精品论文,2017,10(8):852-858.
 
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