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SAM型GaN基雪崩光电二极管研究进展

发表时间:2017-05-31  浏览量:1658  下载量:384
全部作者: 陶睿杰,陈俊
作者单位: 苏州大学电子信息学院
摘 要: 由于GaN材料具有禁带宽度高、抗辐射能力强、光响应度高的特点,近年来GaN基雪崩光电二极管(avalanche photodiodes,APDs)的发展日益迅速。首先对GaN基APDs的发展进行简单回顾,然后重点介绍近几年发展迅速的分离吸收倍增层(separate absorption and multiplication,SAM)型APDs的结构和模型,还有通过改变材料参数(GaN与AlGaN)的极化手段来改善SAM型GaN基APDs的倍增因子和雪崩电压大小的方法,并研究了n-type层、电荷层、倍增层的厚度和掺杂浓度对于器件光电特性的关系,得到性能最优时倍增层厚度为100~150 nm,n-type层厚度为50 nm,电荷层厚度为50 nm,掺杂浓度为3×1019 cm-3,最后介绍了SAM型GaN基APDs的温度特性。
关 键 词: 半导体技术;分离吸收倍增层;综述;极化调控;雪崩光电二极管
Title: Study progress of separate absorption and multiplication GaN-based avalanche photodiodes
Author: TAO Ruijie, CHEN Jun
Organization: School of Electronic and Information Engineering, Soochow University
Abstract: Due to the characteristics of high energy band, high radiation ability and high optical responsivity of GaN, GaN-based avalanche photodiodes (APDs) develop rapidly in the recent years. This paper introduces the development of GaN-based APDs that reviewed, then introduces the structure and model of separate absorption and multiplication (SAM) APDs which develop rapidly, and investigates the polarized methods that change materials parameters (GaN and AlGaN) to improve the method which increase the gain and the breakdown voltage of SAM GaN-based APDs. This paper also studies the relationship between the thickness and doping concentration of the n-type layer, charge layer and multiplication layer with the photoelectric properties of the device. It is found that when the thickness of multiplication layer is 100-150 nm, the thicknesses of n-type layer and charge layer are 50 nm respectively, and the doping concentration of this layer is 3×1019 cm-3, with the optimal performance of the device. Finally it reports the temperature characteristics of SAM GaN-based APDs.
Key words: semiconductor technology; separation and absorption multiplication; review; polarization effect; avalanche photodiodes
发表期数: 2017年5月第10期
引用格式: 陶睿杰,陈俊. SAM型GaN基雪崩光电二极管研究进展[J]. 中国科技论文在线精品论文,2017,10(10):1125-1132.
 
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