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基于宽禁带半导体氮化镓(GaN)的 高温电子电路研究

发表时间:2017-08-31  浏览量:38  下载量:7
全部作者: 沈鸿媛,杨杰,苑振宇,叶柠,陈云娜
作者单位: 东北大学信息科学与与工程学院
摘 要: 由于氮化镓(GaN)具有更高的禁带宽度,基于GaN的宽禁带半导体器件的工作温度远远高于硅半导体器件。从电路设计的角度,通过对高温基板的选择、高温器件的选型、高温电路的互连方式进行分析,采用厚膜电路技术方案,经过印刷电路板(printed circuit board,PCB)设计、网版印刷、高温烧结等一系列流程制作出可以耐高温的线路板。搭建基于高温宽禁带半导体GaN在25~300℃的宽温区高温电路测试平台,对电路进行全温度的测试,并与仿真结果进行对比,验证电路仿真的正确性。最终通过实时信号测试仪接收无线传感信号并成功解调,得到频偏与输入信号的关系,实现在300℃高温下传感电子单元的设计。
关 键 词: 半导体材料;氮化镓(GaN);高温电路;传感电子单元
Title: Research on high temperature electric circuit based on wide bandgap semiconductor GaN
Author: SHEN Hongyuan, YANG Jie, YUAN Zhenyu, YE Ning, CHEN Yunna
Organization: School of Information Science and Engineering, Northeastern University
Abstract: Because of the higher bandgap width of GaN, operating temperature of wide bandgap semiconductor devices such as GaN is much higher than that of silicon semiconductor devices. From the perspective of circuit design, this article bases on selection of high temperature substrates and devices, analysis of interconnection with high temperature circuit and scheme of thick film circuit technology. Through a series of technological process such as printed circuit board (PCB) design, screen printing and high sintering, the high temperature resistant circuit board is produced. And a full temperature test platform of high temperature circuit is set up that ranges 25-300℃ based on wide bandgap semiconductor GaN. Through comparison with the simulation results, the correctness of the simulation circuit is verified. Finally, the wireless sensor signal is received and demodulated by the real-time signal tester, and the relationship between the frequency deviation and the input signal is obtained. The design of the sensor electronic unit is realized at the temperature of 300℃.
Key words: semiconductor material; GaN; high temperature circuit; sensor electronics unit
发表期数: 2017年8月第16期
引用格式: 沈鸿媛,杨杰,苑振宇,等. 基于宽禁带半导体氮化镓(GaN)的 高温电子电路研究[J]. 中国科技论文在线精品论文,2017,10(16):1819-1826.
 
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