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CO2为碳源CVD法直接合成石墨烯纳米结构

发表时间:2017-10-13  浏览量:1580  下载量:311
全部作者: 赵文斌,胡宝山
作者单位: 重庆大学化学化工学院
摘 要: 研究以二氧化碳为碳源,以铜箔为金属基底,使用化学气相沉积(chemical vapor deposition,CVD)法合成石墨烯岛和石墨烯纳米带,并使用光学显微镜、拉曼光谱仪和场发射扫描电子显微镜对其进行表征。实验结果表明,高温反应温度、时间及二氧化碳流量对石墨烯岛和石墨烯纳米带的尺寸和密度有重要影响。此外,高温反应温度对石墨烯岛的结晶性也有影响,温度越高结晶性越好。经过条件优化得出,当高温反应温度为1 000℃,氢气和二氧化碳流量分别为20 sccm(1 sccm=1 mL/min)和8 sccm,反应时间为10 min时,得到的石墨烯岛和石墨烯纳米带的密度最大。
关 键 词: 无机化学;二氧化碳;化学气相沉积;反应参数;石墨烯岛;石墨烯纳米带
Title: Direct synthesis of graphene nanostructures using CO2 as carbon source by CVD method
Author: ZHAO Wenbin, HU Baoshan
Organization: College of Chemistry and Chemical Engineering, Chongqing University
Abstract: In this paper, graphene domains and graphene nanoribbons were synthesized by simple chemical vapor deposition (CVD) method using CO2 and copper foil as carbon source and catalyst substrate, respectively. The graphene materials were characterized by optical microscopy, Raman spectroscopy and field emission scanning electron microscope. The results of experiment show that the temperature, time and CO2 flow rate in the high-temperature reaction have important influences on the size and density of graphene domains and graphene nanoribbons. In addition, the reaction temperature has positive effect on the crystallinity of the graphene domains, which means the higher tempreture, the better crystallinity. It is found that when the flow rates of H2 and CO2 are 20 sccm (1 sccm= 1 mL/min) and 8 sccm respectively, the reaction temperature is 1 000℃ and the reaction time is 10 min, the densities of graphene domains and graphene nanoribbons reach to maximum.
Key words: inorganic chemistry; CO2; chemical vapor deposition; reaction parameters; graphene domains; graphene nanoribbons
发表期数: 2017年10月第19期
引用格式: 赵文斌,胡宝山. CO2为碳源CVD法直接合成石墨烯纳米结构[J]. 中国科技论文在线精品论文,2017,10(19):2120-2124.
 
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