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MBE生长Be掺杂GaAs的光学特性及硫钝化处理研究

发表时间:2017-10-13  浏览量:1313  下载量:267
全部作者: 贾慧民,王彪,王登魁,房丹,郝永芹,张家斌,李辉,张晶,马晓辉
作者单位: 长春理工大学高功率半导体激光国家重点实验室; 中国科学院长春光学精密机械与物理研究所
摘 要: 以Be为掺杂剂,采用分子束外延(molecular beam epitaxy,MBE)技术在半绝缘砷化镓(GaAs)衬底上外延获得表面形貌均匀、晶体质量较好、掺杂浓度较高的Be掺杂p型GaAs薄膜材料,并用于研究硫钝化对材料光致发光(photoluminescence,PL)强度的影响。利用8%(NH4)2S溶液与去离子水或异丙醇以体积比为1:10的比例分别配制钝化液,并对Be掺杂GaAs材料进行硫钝化处理实验,钝化处理后对样品进行光致发光光谱测试,研究钝化后Be掺杂GaAs材料的光致发光特性。光致发光光谱结果表明,两种钝化处理的Be掺杂GaAs的光致发光强度均增强,且在本实验中用异丙醇作溶剂配制的钝化液所处理样品的光致发光强度增强效果更好。
关 键 词: 半导体物理学;GaAs;Be掺杂;分子束外延;硫钝化;光致发光
Title: Optical properties and sulfur passivation research of Be doped GaAs grown by MBE
Author: JIA Huimin, WANG Biao, WANG Dengkui, FANG Dan, HAO Yongqin, ZHANG Jiabin, LI Hui, ZHANG Jing, MA Xiaohui
Organization: State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology; Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences
Abstract: p-type GaAs film with uniform surface morphology, better crystal quality and higher carrier concentration has been grown by molecular beam epitaxy (MBE) technique, which used Be as dopant source. Be doped GaAs was used to investigate the effect of sulfur passivation on the photoluminescence (PL) intensity. The sulfur passivation experiment for Be doped GaAs was conducted with the sulfur passivation solution, which was prepared by 8% (NH4)2S solution with deionized water or isopropanol in a volume ratio of 1:10. After sulfur passivation, the PL spectra was measured to investigate the PL properties of the Be doped GaAs. The PL spectra showed that the PL intensity of the both samples were enhanced. In addition, the PL intensity for the sample treated by 8% (NH4)2S solution with isopropanol as solvent reached to the higher.
Key words: semiconductor physics; GaAs; Be doped; molecular beam epitaxy; sulfur passivation; photoluminescence
发表期数: 2017年10月第19期
引用格式: 贾慧民,王彪,王登魁,等. MBE生长Be掺杂GaAs的光学特性及硫钝化处理研究[J]. 中国科技论文在线精品论文,2017,10(19):2190-2194.
 
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