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纳米图形衬底GaAs/Si材料的热应力分布

发表时间:2017-11-30  浏览量:1137  下载量:115
全部作者: 张然,王俊,成卓,胡海洋,杨泽园,马星,樊宜冰,黄永清,任晓敏
作者单位: 北京邮电大学信息光子学与光通信研究院;北京邮电大学信息光子学与光通信国家重点实验室
摘 要: 由于直接外延制备的GaAs/Si材料不同,热膨胀系数不同,会产生热应力。采用数值计算方法,建立平板衬底和图形衬底GaAs/Si材料二维模型,计算并对比平板衬底与图形衬底GaAs/Si材料中的热应力分布,并进一步优化图形衬底结构参数。结果表明,相比于平板衬底,图形衬底可使相应区域热应力值减小83%;在设计图形衬底的结构时,SiO2掩膜越厚、GaAs窗口区宽度越小、SiO2掩膜宽度越大,越能有效减小生长窗口区域GaAs层材料的热应力。
关 键 词: 半导体材料;热应力;有限元法;GaAs/Si;图形衬底
Title: Thermal stress distribution for nanoscale patterned GaAs/Si material
Author: ZHANG Ran, WANG Jun, CHENG Zhuo, HU Haiyang, YANG Zeyuan, MA Xing, FAN Yibing, HUANG Yongqing, REN Xiaomin
Organization: Institute of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications; State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications
Abstract: Thermal stress will be caused during the epitaxial process of GaAs/Si material resulting from the different thermal expansion coefficient. Applying for numerical calculation method, we established two-dimensional model of GaAs/Si material with plate substrate and patterned substrate, calculated and compared the thermal stress distribution of GaAs/Si material with plate substrate and patterned substrate, and further optimized the structure parameters of patterned substrate. The results showed that, compared with plate substrate, the adoption of patterned substrate significantly decreased the value of thermal stress to 83%. Furthermore, when designing the structure of patterned substrate, the thicker SiO2 mask, the narrower GaAs window region and the wider SiO2 mask region should be better reduce the thermal stress in the GaAs window region.
Key words: semiconductor material; thermal stress; finite element method; GaAs/Si; patterned substrate
发表期数: 2017年11月第22期
引用格式: 张然,王俊,成卓,等. 纳米图形衬底GaAs/Si材料的热应力分布[J]. 中国科技论文在线精品论文,2017,10(22):2518-2524.
 
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