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适应于SiC BJT的双电源驱动电路优化设计

发表时间:2018-01-31  浏览量:527  下载量:60
全部作者: 秦海鸿,刘清,张英,王丹,付大丰
作者单位: 南京航空航天大学自动化学院
摘 要: 对碳化硅双极型晶体管(silicon carbide bipolar junction transistor,SiC BJT)双电源驱动电路的工作原理、工作模态、驱动损耗进行详细分析阐述,发现驱动电路在晶体管关断时存在反流问题,由于使用电容产生驱动脉冲,驱动电容易与驱动电路的寄生电感产生振荡,为此提出通过合理的参数设计缓解反流现象,详细给出了参数优化设计方法,并通过LTSPICE仿真和样机实验验证理论分析的正确性。
关 键 词: 电气工程;碳化硅双极型晶体管双电源驱动;LTSPICE;反流现象
Title: Optimization design of dual-source driver circuit for SiC BJT
Author: QIN Haihong, LIU Qing, ZHANG Ying, WANG Dan, FU Dafeng
Organization: College of Automation Engineering, Nanjing University of Aeronautics and Astronautics
Abstract: This paper analyzes the operating principle, operating modal and drive loss of the dual-source driver circait for silicon carbide bipolar junction transistor (SiC BJT) circuit in detail. It is found that the dual-source driver circait exsits the reversing current phenomenon at turn off time. The dual-source driver circuit is easy to ring due to the adoption of capacitor and the parasitic inductance. Therefore, this paper introduces the reasonable parameter design to eliminate it and offers detailed parameter design process. Finally, the theoretical analysis results are validated through LTSPICE simulation and prototype experiment.
Key words: electrical engineering; dual-source driver for silicon carbide bipolar junction transistor; LTSPICE; reversing current phenomenon
发表期数: 2018年1月第2期
引用格式: 秦海鸿,刘清,张英,等. 适应于SiC BJT的双电源驱动电路优化设计[J]. 中国科技论文在线精品论文,2018,11(2):129-138.
 
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