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光电互连器件实现中GaAs 刻蚀的精确控制技术
发表时间：2018-02-28 浏览量：1876 下载量：335
| 全部作者： | 杨彦伟，刘凯，黄永清，段晓峰，王琦，刘昊，任晓敏 |
| 作者单位： | 北京邮电大学信息光子学与光通信研究院；北京邮电大学信息光子学与光通信国家重点实验室 |
| 摘 要： | 提出一种在电感耦合等离子体（inductively coupled plasma，ICP）刻蚀系统中使用Cl2/Ar/O2刻蚀气体精确控制GaAs刻蚀速率的全新刻蚀技术。实验结果表明，O2的引入可使GaAs的刻蚀速率小于0.1 nm/s，且GaAs的刻蚀速率受到刻蚀尺寸的影响，而GaAs材料的表面粗糙度不会受到刻蚀影响。该刻蚀技术有利于将工艺图形精确转移到半导体材料上，可以应用于半导体光电互连器件的实现。本研究实现了将光刻胶掩膜图形向发光二极管（light emitting diode，LED）的转移，并测量了相关器件的性能。 |
| 关 键 词： | 半导体技术；GaAs；电感耦合等离子体刻蚀；发光二极管；图形转印 |
| Title： | Precise control of GaAs etching for optoelectronic interconnection devices |
| Author： | YANG Yanwei, LIU Kai, HUANG Yongqing, DUAN Xiaofeng, WANG Qi, LIU Hao, REN Xiaomin |
| Organization： | Institute of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications; State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications |
| Abstract： | In this paper, a new etching technology for precisely controlling the GaAs etching rate with Cl2/Ar/O2 etching gas in inductively coupled plasma (ICP) etching system is proposed. With the introduction of O2, GaAs etching rate of less than 0.1 nm/s could be obtained. Moreover, the GaAs etching rate will be affected by etching aperture size and the etched GaAs surface roughness would not be almost affected by etching process. The etching technology is good for the pattern transfer from organic mask to the semiconductor materials for optoelectronic interconnection device application. A pattern transfer from photoresist mask to light emitting diode (LED) is realized and the performance of LED is measured. |
| Key words： | semiconductor technology; GaAs; inductively coupled plasma etching; light emitting diode (LED); pattern transfer |
| 发表期数： | 2018年2月第4期 |
| 引用格式： | 杨彦伟，刘凯，黄永清，等. 光电互连器件实现中GaAs 刻蚀的精确控制技术[J]. 中国科技论文在线精品论文，2018，11（4）：393-397. |
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