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热氧化法制备NiO薄膜及其性质研究

发表时间:2018-03-30  浏览量:841  下载量:235
全部作者: 王东博,高世勇,矫淑杰,谢杨
作者单位: 哈尔滨工业大学材料科学与工程学院
摘 要: 通过热氧化金属Ni膜方法在c-平面蓝宝石衬底上制备NiO薄膜。用X 射线衍射(X-ray diffraction,XRD)法对NiO薄膜的结构进行表征,通过吸收光谱、拉曼光谱和霍尔效应测量对其光电性质进行表征。XRD图谱表明利用热氧化法成功制备了立方NiO薄膜。NiO(111)衍射图表明其与c-平面蓝宝石衬底的外延关系为NiO[111]||c-Al2O3[0001]. 拉曼和XRD 结果表明,c轴蓝宝石上生长的NiO存在压应力。通过真空镀膜机蒸镀金属Ni 膜,并在500~700℃的O2气氛下热氧化得到立方结构(111)取向的NiO薄膜,其吸收光谱显示,NiO在可见波段的透过率较高,光学带隙为3.7 eV. 霍尔效应测量结果表明,NiO薄膜为p型电导,载流子浓度约为5×1016 cm−3.
关 键 词: 无机非金属材料其他学科;热氧化;宽带隙半导体;NiO
Title: Fabrication and characterization of NiO thin film by thermal oxidation method
Author: WANG Dongbo, GAO Shiyong, JIAO Shujie, XIE Yang
Organization: School of Materials Science and Engineering, Harbin Institute of Technology
Abstract: NiO thin films have been fabricated on c-plane sapphire substrate by thermal oxidation method. The structural, optical and electrical properties of NiO thin film have been studied in this paper by X-ray diffraction (XRD) method, optical absorption spectra, Roman spectra and Hall effect measurements. XRD spectra show cubic NiO thin films have been fabricated by thermal oxidation method. The NiO(111) diffraction pattern indicates that the epitaxial relation with c-plane sapphire substrate is NiO[111]||c-Al2O3[0001]. Raman and XRD results also show that NiO thin films suffered compressive elastic strain on c-plane sapphire substrate. Optical absorption spectra present that the NiO thin films have wide optical band gap of 3.7 eV and high transmittance in visible band. Hall effect measurements show that NiO thin film have p-type conduction with carrier concentration of about 5×1016 cm−3.
Key words: other subjects of inorganic nonmetallic materials; thermal oxidation; wide-band-gap semiconductor; NiO
发表期数: 2018年3月第6期
引用格式: 王东博,高世勇,矫淑杰,等. 热氧化法制备NiO薄膜及其性质研究[J]. 中国科技论文在线精品论文,2018,11(6):550-554.
 
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