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基于宽禁带半导体氮化镓的高温电子器件建模

发表时间:2018-05-31  浏览量:442  下载量:74
全部作者: 沈鸿媛,杨杰,苑振宇,叶柠,陈云娜
作者单位: 东北大学信息科学与工程学院
摘 要: 第三代半导体材料氮化镓(GaN)具有更大的禁带宽度及更好的耐高温性能,逐渐成为半导体器件研究的热点。本文从高温器件模型的建立方面进行研究,搭建全温度测试系统,针对GaN电子器件的电气特性从25℃(常温)到300℃的环境温度宽范围的温度区域进行测试,并对其在不同温度下的输出特性、转移特性和器件的自热效应等进行深入研究。进一步通过数据拟合的方式改进直流(direct current,DC)模型。正确的器件模型为后续进行高温电路仿真设计奠定了理论基础,有效地减少了器件浪费,缩短了高温电子电路的设计周期,提高了电路设计及实现的成功率。
关 键 词: 半导体技术;氮化镓(GaN);高温电路;器件模型;数据拟合
Title: Modeling of high temperature electric device based on wide bandgap semiconductor GaN
Author: SHEN Hongyuan, YANG Jie, YUAN Zhenyu, YE Ning, CHEN Yunna
Organization: College of Information Science and Engineering, Northeastern University
Abstract: Third generation semiconductor materials, GaN, which has greater band gap and better high-temperature performance, has become a hot research of semiconductor devices. The research from the perspective of establishing a high temperature device model builds a test system for full temperature. The electrical characteristics of GaN electronic devices are tested in temperature area from 25℃ (normal temperature) to 300℃ ambient temperature wide range. Output characteristics, transfer characteristics and self heating effect of device are further researched in different temperatures. Through the data fitting method, the direct current (DC) model is improved. Correct model for subsequent high temperature circuit simulation design laid the theoretical foundation can effectively reduce the waste of the device, shorten the design period of the high temperature electronic circuit and improve the success rate of the circuit.
Key words: semiconductor technology; GaN; high temperature circuit; device model; data fitting
发表期数: 2018年5月第10期
引用格式: 沈鸿媛,杨杰,苑振宇,等. 基于宽禁带半导体氮化镓的高温电子器件建模[J]. 中国科技论文在线精品论文,2018,11(10):1039-1046.
 
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