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SiNx基阻变存储器的单双极阻变特性演变探究

发表时间:2018-08-31  浏览量:173  下载量:40
全部作者: 尤嘉旸,沈自晓,江小帆,马忠元,徐岭,李伟, 陈坤基,黄信凡,冯端
作者单位: 南京大学电子科学与工程学院
摘 要: 首次探究了SiNx基阻变存储器单双极阻变特性的演变机制,发现氢化非晶氮化硅薄膜具有典型的双极阻变特性;而纳米晶硅镶嵌的氮化硅多层膜结构具有不依赖于顶电极的单极阻变特性。通过傅里叶变换红外光谱(Fourier transform infrared spectroscopy,FTIR)和透射电子显微镜(transmission electron microscope,TEM)对器件组分和微结构进行分析,进一步阐明了导致单双极阻变特性演变的原因:氢离子移动导致的硅悬挂键阻变通道的变化是氢化非晶氮化硅薄膜双极阻变的根源;而纳米晶硅连续导电通路的形成与断裂是纳米晶硅镶嵌氮化硅多层膜发生单极阻变的主要原因,其免电激活的阻变特性在存储器集成方面具有很好的应用前景。
关 键 词: 半导体技术;氮化硅;纳米晶硅;阻变特性;硅悬挂键
Title: Evolution from unipolar to bipolar resistive switching characteristics of SiNx-based resistive switching memory
Author: YOU Jiayang, SHEN Zixiao, JIANG Xiaofan, MA Zhongyuan, XU Ling, LI Wei, CHEN Kunji, HUANG Xinfan, FENG Duan
Organization: School of Electronic Science and Engineering, Nanjing University
Abstract: Here we make an investigation on the evolution from the unipolar to bipolar resistive switching mechanism of SiNx-based resistive switching memories, and demonstrate that the a-SiN0.62:H film has a typical bipolar resistive switching characteristic while the nc-Si embedded SixN/SiyN multilayers have a unipolar resistive switching characteristic independent of top electrodes. Based on the analysis of components and microstructure by Fourier transform infrared spectroscopy (FTIR) and transmission electron microscope (TEM), we further account for the unipolar-to-bipolar evolution of the resistive switching behavior. The bipolar resistive switching of the a-SiNx:H film is related with the formation and rupture of Si dangling bond pathways caused by H+ motion. In contrast, the unipolar resistive switching of the nc-Si embedded SixN/SiyN multilayers is attributed to the formation and rupture of nc-Si continuous conduction pathways. Its electronic-free resistive switching characteristic has great potential in memory integration.
Key words: semiconductor technology; silicon nitride; nc-Si; resistive switching characteristics; Si dangling bonds
发表期数: 2018年8月第16期
引用格式: 尤嘉旸,沈自晓,江小帆,等. SiNx基阻变存储器的单双极阻变特性演变探究[J]. 中国科技论文在线精品论文,2018,11(16):1671-1676.
 
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