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微形貌调制对55 nm铜互连电迁移可靠性的影响

发表时间:2018-11-30  浏览量:149  下载量:18
全部作者: 林聪,徐莹,周维,何亮亮
作者单位: 上海华力微电子有限公司
摘 要: 随着芯片集成度越来越高,金属互连线承受的电流密度也越来越高,电迁移引起的集成电路可靠性问题日趋凸显。研究介绍了电迁移的基本原理和测试方法,分析了铜互连不同位置电迁移失效的主要原因,同时探讨了改善铜互连电迁移性能的各种方法,并结合透射电子显微镜(transmission electron microscope,TEM)和能量色散X射线光谱(energy dispersive X-ray spectroscopy,EDX)等手段进行分析,指出未来电迁移改善的主要研究方向为通过优化刻蚀和阻挡层沉积程式以改善通孔底部的形貌。
关 键 词: 半导体技术;集成电路;电迁移;铜互连;可靠性
Title: Effect of micro-profile modulation on 55 nm copper interconnect electromigration realiability
Author: LIN Cong, XU Ying, ZHOU Wei, HE Liangliang
Organization: Shanghai Huali Microelectronics Corporation
Abstract: As the integration of chip is more and more high, the current density on metal interconnect is higher and higher. And the problem of integrated circuit reliability caused by electromigration is increasingly prominent. This paper introduced the basic principle and test method of electromigration, analyzed the major cause of copper interconnect electromigiration failure in different position, and discussed all the methods to improve copper interconnect electromigiration performance. Using transmission electron microscope (TEM) and energy dispersive X-ray spectroscopy (EDX) to analysis, the main research direction of improving electromigration in the future was pointed out to improve the profile of hole bottom by optimizing etch and barrier deposition recipes.
Key words: semiconductor technology; integrated circuit; electromigration; copper interconnect; reliability
发表期数: 2018年11月第22期
引用格式: 林聪,徐莹,周维,等. 微形貌调制对55 nm铜互连电迁移可靠性的影响[J]. 中国科技论文在线精品论文,2018,11(22):2304-2310.
 
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