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氧化锡稀磁半导体研究进展

发表时间:2019-03-22  浏览量:800  下载量:126
全部作者: 江凤,李博,冯琴,刘天府
作者单位: 北京理工大学化学与化工学院
摘 要: 稀磁半导体(diluted magnetic semiconductor,DMS)是结合电荷导电性能与电子自旋,使材料同时具有铁磁性及导电性能的一类自旋电子学材料。找到性能优良、居里温度高于室温的DMS是过去十几年的研究热点。氧化锡(SnO2)是重要的氧化物稀磁半导体之一。过渡金属掺杂氧化锡体系已实现了室温铁磁性,有望成为制备自旋电子学器件的材料。本文主要介绍了氧化锡基DMS的研究进展及磁性来源,并对其未来的研究方向进行了展望。
关 键 词: 无机化学;稀磁半导体;综述;自旋电子学;氧化锡;过渡金属
Title: Research advances on diluted magnetic semiconductors of tin oxide
Author: JIANG Feng, LI Bo, FENG Qin, LIU Tianfu
Organization: School of Chemistry and Chemical Engineering, Beijing Institute of Technology
Abstract: Diluted magnetic semiconductor (DMS) is spintronic material that combines the two characters of the electrons: charge and spin, which make the material possess both ferromagnetic and conductive properties. Finding novel DMS with excellent performance and Curie temperature higher than room temperature is a research hotspot in the past decade or so. Tin oxide (SnO2) is one of the important oxide diluted magnetic semiconductors. Transition metal-doped tin oxide systems have achieved room temperature ferromagnetism, and are expected to be materials for the preparation of spintronic devices. The research progress and magnetic source of SnO2-based DMS are mainly discussed in details, and the future research direction is also prospected.
Key words: inorganic chemistry; diluted magnetic semiconductor; review; spintronics; tin oxide; transition metals
发表期数: 2019年2月第1期
引用格式: 江凤,李博,冯琴,等. 氧化锡稀磁半导体研究进展[J]. 中国科技论文在线精品论文,2019,12(1):90-98.
 
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