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ZnO:Ga基闪烁材料的制备及其在辐射探测上的应用研究现状

发表时间:2019-04-30  浏览量:737  下载量:124
全部作者: 温欣,张清民
作者单位: 西安交通大学能源与动力工程学院
摘 要: 本文首先介绍了ZnO晶体的基本性质、缺陷和发光机理等,然后总结和比较了ZnO体单晶和ZnO:Ga基闪烁薄膜的制备方法,接着介绍了ZnO:Ga基闪烁材料在辐射探测上的应用研究现状,最后总结了目前在限制ZnO:Ga基闪烁材料广泛应用中亟需解决的一些问题。
关 键 词: 核探测技术与核电子学;ZnO:Ga基闪烁材料;综述;ZnO单晶制备;ZnO:Ga薄膜制备;超快闪烁探测器
Title: Production of ZnO:Ga-based scintillation materials and the application research status in radiation detection
Author: WEN Xin, ZHANG Qingmin
Organization: School of Energy and Power Engineering, Xi’an Jiaotong University
Abstract: In this paper, the basic properties, defects and luminescence mechanism of ZnO crystals are firstly introduced. Then the production methods of bulk ZnO single crystals and ZnO:Ga-based scintillation thin films are summarized and compared. Thereafter, the application research status of ZnO:Ga-based scintillation materials in radiation detection are presented. Finally, it’s concluded that some problems which limit the wide application of ZnO:Ga-based scintillation materials need to be solved.
Key words: nuclear detection technology and nuclear electronics; ZnO:Ga-based scintillation materials; review; production of ZnO single crystals; preparation of ZnO:Ga thin films; ultra-fast scintillation detectors
发表期数: 2019年4月第2期
引用格式: 温欣,张清民. ZnO:Ga基闪烁材料的制备及其在辐射探测上的应用研究现状[J]. 中国科技论文在线精品论文,2019,12(2):184-196.
 
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