您的位置:首页  > 论文页面

先进节点工艺套刻精度测量的改善

发表时间:2019-06-28  浏览量:2296  下载量:429
全部作者: 毛晓明,杨志
作者单位: 上海交通大学电子信息与电气工程学院,薄膜与微细技术教育部重点实验室; 上海微技术工业研究院
摘 要: 在先进技术节点集成电路制造工艺中,套刻精度测量标识被化学机械抛光(chemical mechanical polishing,CMP)工艺损伤会导致测量结果不精确,进而干扰制造工艺的稳定性。为解决此难题,在套刻精度关键工艺层次上,根据具体层次的工艺条件,独立开发了新型的先进影像测量(advanced imaging metrology,AIM)标识。通过对测量标识的优化设计,标识轮廓抵御CMP工艺损伤的能力得以提高。优化设计的手段包括冗余图形饱和处理、大尺寸图形切割处理、光栅周期调整优化等。通过对工艺流程中硅片实验的测量结果进行统计分析,证实了新型AIM标识比普通AIM标识的测量结果更精确,可以提高工艺稳定性。
关 键 词: 半导体技术;套刻精度测量;先进影像测量标识;套刻精度测量标识设计;光刻工艺;化学机械抛光工艺
Title: Improvement on overlay accuracy measurement of advanced node process
Author: MAO Xiaoming, YANG Zhi
Organization: Key Laboratory for Thin Film and Microfabrication of Ministry of Education, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University; Shanghai Industrial μTechnology Research Institute
Abstract: During the advanced technology node integrated circuit manufacturing process, damage to the target of the overlay accuracy measurement by the chemical mechanical polishing (CMP) process will result in ambiguous measurement result, and even in interfering the stability of manufacturing process. To resolve this issue, on the critical process layers of overlay accuracy, new type advanced imaging metrology (AIM) targets are developed independently on each layer with specific process conditions. The optimization design of overlay targets is able to enhance the robustness of the target to avoid the profile damages caused by CMP. The optimizations include the dummy pattern saturation, the segmentation on large size pattern and the grating cycle adjustment and optimization, etc. The statistical analyses of measurement result collected on process flow silicon wafers experiment confirm that the new type AIM target behaves more precisely than the ordinary AIM target and improves the process stability.
Key words: semiconductor technology; overlay accuracy measurement; advanced imaging metrology target; overlay accuracy measurement target design; lithography process; chemical mechanical polishing process
发表期数: 2019年6月第3期
引用格式: 毛晓明,杨志. 先进节点工艺套刻精度测量的改善[J]. 中国科技论文在线精品论文,2019,12(3):507-516.
 
5 评论数 0
暂无评论
友情链接